High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Tutkimustuotos: Lehtiartikkeli

Tutkijat

Organisaatiot

  • Beneq Oy
  • VTT Technical Research Centre of Finland

Kuvaus

This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli071606
Sivut1-4
Sivumäärä4
JulkaisuApplied Physics Letters
Vuosikerta100
Numero7
TilaJulkaistu - 2012
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 822986