High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

Pinki Pal; Bhupesh Bhardwaj; Robin Dahiya; Sami Suihkonen; Jori Lemettinen; Apurba Laha; Dinesh Kabra; Suddhasatta Mahapatra

doi:10.1109/ICEE56203.2022.10117858

High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

Pinki Pal, Bhupesh Bhardwaj, Robin Dahiya, Sami Suihkonen, Jori Lemettinen, Apurba Laha, Dinesh Kabra, Suddhasatta Mahapatra

Indian Institute of Technology Bombay

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Abstrakti

Fabrication and systematic characterization of GaN/Si(111)-based visible-blind ultraviolet photodetectors, with Pt/Au contacts, is reported. We demonstrate a record-high detectivity of 4.93x1014 Jones, for bias voltages exceeding VB = 14 V. The high detectivity is obtained due to extremely low dark current ( pA, even for VB = 40 V), and high responsivity, in the wavelength range of 320 nm - 380 nm. The highest responsivity obtained for the measured devices is 255 A/W, at VB = 50 V and excitation wavelength of 353 nm.

Alkuperäiskieli	Englanti
Otsikko	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Kustantaja	IEEE
ISBN (elektroninen)	978-1-6654-9185-3
DOI - pysyväislinkit	https://doi.org/10.1109/ICEE56203.2022.10117858
Tila	Julkaistu - 2022
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	IEEE International Conference on Emerging Electronics - Bangalore, Intia Kesto: 11 jouluk. 2022 → 14 jouluk. 2022

Conference

Conference	IEEE International Conference on Emerging Electronics
Lyhennettä	ICEE
Maa/Alue	Intia
Kaupunki	Bangalore
Ajanjakso	11/12/2022 → 14/12/2022

Pääsy asiakirjaan

10.1109/ICEE56203.2022.10117858

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@inproceedings{658a85da74ee4a1c892189890135aae8,

title = "High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)",

abstract = "Fabrication and systematic characterization of GaN/Si(111)-based visible-blind ultraviolet photodetectors, with Pt/Au contacts, is reported. We demonstrate a record-high detectivity of 4.93x1014 Jones, for bias voltages exceeding VB = 14 V. The high detectivity is obtained due to extremely low dark current ( pA, even for VB = 40 V), and high responsivity, in the wavelength range of 320 nm - 380 nm. The highest responsivity obtained for the measured devices is 255 A/W, at VB = 50 V and excitation wavelength of 353 nm.",

keywords = "GaN, Schottky contacts, UV Photodetector",

author = "Pinki Pal and Bhupesh Bhardwaj and Robin Dahiya and Sami Suihkonen and Jori Lemettinen and Apurba Laha and Dinesh Kabra and Suddhasatta Mahapatra",

note = "Funding Information: The authors gratefully acknowledge the contributions of the IIT Bombay Nanofabrication Facility (IITBNF), and the funding support from the Department of Science and Technology (DST), Government of India (GoI). PP also acknowledges discussions with Dr. Ritam Sarkar, regarding data analysis. Publisher Copyright: {\textcopyright} 2022 IEEE.; IEEE International Conference on Emerging Electronics, ICEE ; Conference date: 11-12-2022 Through 14-12-2022",

year = "2022",

doi = "10.1109/ICEE56203.2022.10117858",

language = "English",

booktitle = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022",

publisher = "IEEE",

address = "United States",

}

Pal, P, Bhardwaj, B, Dahiya, R, Suihkonen, S, Lemettinen, J, Laha, A, Kabra, D & Mahapatra, S 2022, High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111). julkaisussa 2022 IEEE International Conference on Emerging Electronics, ICEE 2022. IEEE, IEEE International Conference on Emerging Electronics, Bangalore, Intia, 11/12/2022. https://doi.org/10.1109/ICEE56203.2022.10117858

TY - GEN

T1 - High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

AU - Pal, Pinki

AU - Bhardwaj, Bhupesh

AU - Dahiya, Robin

AU - Suihkonen, Sami

AU - Lemettinen, Jori

AU - Laha, Apurba

AU - Kabra, Dinesh

AU - Mahapatra, Suddhasatta

N1 - Funding Information: The authors gratefully acknowledge the contributions of the IIT Bombay Nanofabrication Facility (IITBNF), and the funding support from the Department of Science and Technology (DST), Government of India (GoI). PP also acknowledges discussions with Dr. Ritam Sarkar, regarding data analysis. Publisher Copyright: © 2022 IEEE.

PY - 2022

Y1 - 2022

N2 - Fabrication and systematic characterization of GaN/Si(111)-based visible-blind ultraviolet photodetectors, with Pt/Au contacts, is reported. We demonstrate a record-high detectivity of 4.93x1014 Jones, for bias voltages exceeding VB = 14 V. The high detectivity is obtained due to extremely low dark current ( pA, even for VB = 40 V), and high responsivity, in the wavelength range of 320 nm - 380 nm. The highest responsivity obtained for the measured devices is 255 A/W, at VB = 50 V and excitation wavelength of 353 nm.

AB - Fabrication and systematic characterization of GaN/Si(111)-based visible-blind ultraviolet photodetectors, with Pt/Au contacts, is reported. We demonstrate a record-high detectivity of 4.93x1014 Jones, for bias voltages exceeding VB = 14 V. The high detectivity is obtained due to extremely low dark current ( pA, even for VB = 40 V), and high responsivity, in the wavelength range of 320 nm - 380 nm. The highest responsivity obtained for the measured devices is 255 A/W, at VB = 50 V and excitation wavelength of 353 nm.

KW - GaN

KW - Schottky contacts

KW - UV Photodetector

UR - http://www.scopus.com/inward/record.url?scp=85160544432&partnerID=8YFLogxK

U2 - 10.1109/ICEE56203.2022.10117858

DO - 10.1109/ICEE56203.2022.10117858

M3 - Conference article in proceedings

AN - SCOPUS:85160544432

BT - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022

PB - IEEE

T2 - IEEE International Conference on Emerging Electronics

Y2 - 11 December 2022 through 14 December 2022

ER -

High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

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Conference

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