He implantation induced defects in InN

InN layers have been implanted with helium at 158 keV at various fluences to study the nature of the generated defects. The defects have been probed using positron annihilation spectroscopy. The first measurements showed that at least two different kinds of defects are created depending of the implantation fluence. The second measurements performed two years later gave different results suggesting that at least one of these defects is not stable at room temperature.