Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

Tutkimustuotos: Lehtiartikkeli

Tutkijat

  • Maria Berdova
  • Xuwen Liu
  • Claudia Wiemer
  • Alessio Lamperti
  • Grazia Tallarida
  • Elena Cianci
  • Marco Fanciulli
  • Sami Franssila

Organisaatiot

  • Institute for Microelectronics and Microsystems
  • Dipartimento di Scienza dei Materiali, Universita degli studi di Milano Bicocca

Kuvaus

The investigation of mechanical properties of atomic layer deposition HfO2 films is important for implementing these layers in microdevices. The mechanical properties of films change as a function of composition and structure, which accordingly vary with deposition temperature and post-annealing. This work describes elastic modulus, hardness, and wear resistance of as-grown and annealed HfO2. From nanoindentation measurements, the elastic modulus and hardness remained relatively stable in the range of 163-165 GPa and 8.3-9.7 GPa as a function of deposition temperature. The annealing of HfO2 caused significant increase in hardness up to 14.4 GPa due to film crystallization and densification. The structural change also caused increase in the elastic modulus up to 197 GPa. Wear resistance did not change as a function of deposition temperature, but improved upon annealing.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli051510
JulkaisuJOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A
Vuosikerta34
Numero5
TilaJulkaistu - 1 syyskuuta 2016
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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