Growth of undoped GaSb layers from Ga-rich melts by liquid phase epitaxy

T. Koljonen

Growth of undoped GaSb layers from Ga-rich melts by liquid phase epitaxy

T. Koljonen

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Julkaisupaikka	Espoo
Sivut	38-41
Tila	Julkaistu - 1993
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Julkaisusarja

Nimi	Optoelectronics Laboratory, Helsinki University of Technology
Numero	TKK-F-C148

Tutkimusalat

gallium antimonide
liquid phase epitaxy (LPE)

Siteeraa tätä

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title = "Growth of undoped GaSb layers from Ga-rich melts by liquid phase epitaxy",

keywords = "gallium antimonide, liquid phase epitaxy (LPE), gallium antimonide, liquid phase epitaxy (LPE), gallium antimonide, liquid phase epitaxy (LPE)",

author = "T. Koljonen",

year = "1993",

language = "English",

series = "Optoelectronics Laboratory, Helsinki University of Technology",

number = "TKK-F-C148",

pages = "38--41",

type = "WorkingPaper",

}

TY - UNPB

T1 - Growth of undoped GaSb layers from Ga-rich melts by liquid phase epitaxy

AU - Koljonen, T.

PY - 1993

Y1 - 1993

KW - gallium antimonide

KW - liquid phase epitaxy (LPE)

KW - gallium antimonide

KW - liquid phase epitaxy (LPE)

KW - gallium antimonide

KW - liquid phase epitaxy (LPE)

M3 - Working paper

T3 - Optoelectronics Laboratory, Helsinki University of Technology

SP - 38

EP - 41

BT - Growth of undoped GaSb layers from Ga-rich melts by liquid phase epitaxy

CY - Espoo

ER -