Growth and properties of self-catalyzed (In,Mn)As nanowires

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • St. Petersburg State Polytechnical University
  • Max-Planck-Institut für Mikrostrukturphysik
  • Russian Academy of Sciences
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)

Kuvaus

Mn-assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side-walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut554-557
Sivumäärä4
JulkaisuPHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS
Vuosikerta10
Numero7
TilaJulkaistu - 1 heinäkuuta 2016
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 6666711