@techreport{84f450897f474fc8bfe48c199d7b9818,
title = "Growth and defects of GaAsN layers on GaAs",
keywords = "defects, GaAsN, misfit dislocations, MOVPE, x-ray topography, defects, GaAsN, misfit dislocations, MOVPE, x-ray topography, defects, GaAsN, misfit dislocations, MOVPE, x-ray topography",
author = "J. Toivonen and T. Tuomi and J. Riikonen and L. Knuuttila and R. Rantam{\"a}ki and M. Sopanen and H. Lipsanen and P.J. McNally and J. Kanatharana and W. Chen and D. Lowney",
year = "2001",
language = "English",
series = "HASYLAB-DESY Annual Report 2000, Part I",
pages = "861--862",
type = "WorkingPaper",
}