Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses

H.K. Lipsanen; V.M. Airaksinen

doi:10.1007/BF02671231

Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

Alkuperäiskieli	Englanti
Sivut	465-470
Sivumäärä	6
Julkaisu	Journal of Electronic Materials
Vuosikerta	23
Numero	5
DOI - pysyväislinkit	https://doi.org/10.1007/BF02671231
Tila	Julkaistu - toukok. 1994
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Tutkimusalat

superlattice, GaAs, AlAs, molecular beam epitaxy, photoreflectance

Pääsy asiakirjaan

10.1007/BF02671231

Siteeraa tätä

@article{c4b304f0225748708c1951f5e64be4ce,

title = "Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses",

keywords = "superlattice, GaAs, AlAs, molecular beam epitaxy, photoreflectance, superlattice, GaAs, AlAs, molecular beam epitaxy, photoreflectance, superlattice, GaAs, AlAs, molecular beam epitaxy, photoreflectance",

author = "H.K. Lipsanen and V.M. Airaksinen",

year = "1994",

month = may,

doi = "10.1007/BF02671231",

language = "English",

volume = "23",

pages = "465--470",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

number = "5",

}

TY - JOUR

T1 - Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses

AU - Lipsanen, H.K.

AU - Airaksinen, V.M.

PY - 1994/5

Y1 - 1994/5

KW - superlattice, GaAs, AlAs, molecular beam epitaxy, photoreflectance

U2 - 10.1007/BF02671231

DO - 10.1007/BF02671231

M3 - Article

SN - 0361-5235

VL - 23

SP - 465

EP - 470

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -