Graphene/Bi2Se3 Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance

Hoon Hahn Yoon; Faisal Ahmed; Yunyun Dai; Henry A. Fernandez; Xiaoqi Cui; Xueyin Bai; DIao Li; Mingde Du; Harri Lipsanen; Zhipei Sun

doi:10.1109/CLEO/Europe-EQEC52157.2021.9542020

Graphene/Bi2Se3 Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance

Hoon Hahn Yoon, Faisal Ahmed, Yunyun Dai, Henry A. Fernandez, Xiaoqi Cui, Xueyin Bai, DIao Li, Mingde Du, Harri Lipsanen, Zhipei Sun

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

4 Sitaatiot (Scopus)

Abstrakti

Mixed-dimensional van der Waals heterostructures [1] are a very promising platform for the next generation of nanoelectronics and nanophotonics, for example, high-sensitivity mid-infrared light detection. Here, we report the versatile functionalities revealed in a hybrid device consisting of two-dimensional graphene and three-dimensional topological insulator.

Alkuperäiskieli	Englanti
Sivumäärä	1
DOI - pysyväislinkit	https://doi.org/10.1109/CLEO/Europe-EQEC52157.2021.9542020
Tila	Julkaistu - 21 kesäk. 2021
OKM-julkaisutyyppi	Ei oikeutettu
Tapahtuma	European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference - Munich, Saksa Kesto: 21 kesäk. 2021 → 25 kesäk. 2021

Conference

Conference	European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference
Lyhennettä	CLEO/Europe-EQEC
Maa/Alue	Saksa
Kaupunki	Munich
Ajanjakso	21/06/2021 → 25/06/2021

Pääsy asiakirjaan

10.1109/CLEO/Europe-EQEC52157.2021.9542020

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Yoon, H. H., Ahmed, F., Dai, Y., Fernandez, H. A., Cui, X., Bai, X., Li, DI., Du, M., Lipsanen, H., & Sun, Z. (2021). Graphene/Bi2Se3 Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance. Abstraktin lähde: European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Munich, Saksa. https://doi.org/10.1109/CLEO/Europe-EQEC52157.2021.9542020

@conference{50f551744404409f8b0e79393194419e,

title = "Graphene/Bi2Se3 Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance",

abstract = "Mixed-dimensional van der Waals heterostructures [1] are a very promising platform for the next generation of nanoelectronics and nanophotonics, for example, high-sensitivity mid-infrared light detection. Here, we report the versatile functionalities revealed in a hybrid device consisting of two-dimensional graphene and three-dimensional topological insulator.",

keywords = "tunneling barrier, hybrid photodetection, graphene, topological insulator, heterointerface",

author = "Yoon, {Hoon Hahn} and Faisal Ahmed and Yunyun Dai and Fernandez, {Henry A.} and Xiaoqi Cui and Xueyin Bai and DIao Li and Mingde Du and Harri Lipsanen and Zhipei Sun",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, CLEO/Europe-EQEC ; Conference date: 21-06-2021 Through 25-06-2021",

year = "2021",

month = jun,

day = "21",

doi = "10.1109/CLEO/Europe-EQEC52157.2021.9542020",

language = "English",

}

Yoon, HH, Ahmed, F, Dai, Y, Fernandez, HA, Cui, X, Bai, X, Li, DI, Du, M, Lipsanen, H & Sun, Z 2021, 'Graphene/Bi2Se3 Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance', European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Munich, Saksa, 21/06/2021 - 25/06/2021. https://doi.org/10.1109/CLEO/Europe-EQEC52157.2021.9542020

Graphene/Bi2Se3 Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance. / Yoon, Hoon Hahn; Ahmed, Faisal; Dai, Yunyun et al.
2021. Abstraktin lähde: European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Munich, Saksa.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

TY - CONF

T1 - Graphene/Bi2Se3 Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance

AU - Yoon, Hoon Hahn

AU - Ahmed, Faisal

AU - Dai, Yunyun

AU - Fernandez, Henry A.

AU - Cui, Xiaoqi

AU - Bai, Xueyin

AU - Li, DIao

AU - Du, Mingde

AU - Lipsanen, Harri

AU - Sun, Zhipei

PY - 2021/6/21

Y1 - 2021/6/21

N2 - Mixed-dimensional van der Waals heterostructures [1] are a very promising platform for the next generation of nanoelectronics and nanophotonics, for example, high-sensitivity mid-infrared light detection. Here, we report the versatile functionalities revealed in a hybrid device consisting of two-dimensional graphene and three-dimensional topological insulator.

AB - Mixed-dimensional van der Waals heterostructures [1] are a very promising platform for the next generation of nanoelectronics and nanophotonics, for example, high-sensitivity mid-infrared light detection. Here, we report the versatile functionalities revealed in a hybrid device consisting of two-dimensional graphene and three-dimensional topological insulator.

KW - tunneling barrier

KW - hybrid photodetection

KW - graphene

KW - topological insulator

KW - heterointerface

UR - http://www.scopus.com/inward/record.url?scp=85117601066&partnerID=8YFLogxK

U2 - 10.1109/CLEO/Europe-EQEC52157.2021.9542020

DO - 10.1109/CLEO/Europe-EQEC52157.2021.9542020

M3 - Abstract

AN - SCOPUS:85117601066

T2 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference

Y2 - 21 June 2021 through 25 June 2021

ER -

Graphene/Bi2Se3 Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance

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