Gigahertz Single-Electron Pumping Mediated by Parasitic States

Tutkimustuotos: Lehtiartikkeli

Standard

Gigahertz Single-Electron Pumping Mediated by Parasitic States. / Rossi, Alessandro; Klochan, Jevgeny; Timoshenko, Janis; Hudson, Fay E.; Möttönen, Mikko; Rogge, Sven; Dzurak, Andrew S.; Kashcheyevs, Vyacheslavs; Tettamanzi, Giuseppe C.

julkaisussa: Nano Letters, Vuosikerta 18, Nro 7, 11.07.2018, s. 4141-4147.

Tutkimustuotos: Lehtiartikkeli

Harvard

Rossi, A, Klochan, J, Timoshenko, J, Hudson, FE, Möttönen, M, Rogge, S, Dzurak, AS, Kashcheyevs, V & Tettamanzi, GC 2018, 'Gigahertz Single-Electron Pumping Mediated by Parasitic States', Nano Letters, Vuosikerta. 18, Nro 7, Sivut 4141-4147. https://doi.org/10.1021/acs.nanolett.8b00874

APA

Rossi, A., Klochan, J., Timoshenko, J., Hudson, F. E., Möttönen, M., Rogge, S., ... Tettamanzi, G. C. (2018). Gigahertz Single-Electron Pumping Mediated by Parasitic States. Nano Letters, 18(7), 4141-4147. https://doi.org/10.1021/acs.nanolett.8b00874

Vancouver

Rossi A, Klochan J, Timoshenko J, Hudson FE, Möttönen M, Rogge S et al. Gigahertz Single-Electron Pumping Mediated by Parasitic States. Nano Letters. 2018 heinä 11;18(7):4141-4147. https://doi.org/10.1021/acs.nanolett.8b00874

Author

Rossi, Alessandro ; Klochan, Jevgeny ; Timoshenko, Janis ; Hudson, Fay E. ; Möttönen, Mikko ; Rogge, Sven ; Dzurak, Andrew S. ; Kashcheyevs, Vyacheslavs ; Tettamanzi, Giuseppe C. / Gigahertz Single-Electron Pumping Mediated by Parasitic States. Julkaisussa: Nano Letters. 2018 ; Vuosikerta 18, Nro 7. Sivut 4141-4147.

Bibtex - Lataa

@article{baabf359bb524053a3f3cb35773d93ea,
title = "Gigahertz Single-Electron Pumping Mediated by Parasitic States",
abstract = "In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.",
keywords = "Quantum dot, quantum electrical metrology, silicon, single-electron pump",
author = "Alessandro Rossi and Jevgeny Klochan and Janis Timoshenko and Hudson, {Fay E.} and Mikko M{\"o}tt{\"o}nen and Sven Rogge and Dzurak, {Andrew S.} and Vyacheslavs Kashcheyevs and Tettamanzi, {Giuseppe C.}",
year = "2018",
month = "7",
day = "11",
doi = "10.1021/acs.nanolett.8b00874",
language = "English",
volume = "18",
pages = "4141--4147",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "AMERICAN CHEMICAL SOCIETY",
number = "7",

}

RIS - Lataa

TY - JOUR

T1 - Gigahertz Single-Electron Pumping Mediated by Parasitic States

AU - Rossi, Alessandro

AU - Klochan, Jevgeny

AU - Timoshenko, Janis

AU - Hudson, Fay E.

AU - Möttönen, Mikko

AU - Rogge, Sven

AU - Dzurak, Andrew S.

AU - Kashcheyevs, Vyacheslavs

AU - Tettamanzi, Giuseppe C.

PY - 2018/7/11

Y1 - 2018/7/11

N2 - In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.

AB - In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.

KW - Quantum dot

KW - quantum electrical metrology

KW - silicon

KW - single-electron pump

UR - http://www.scopus.com/inward/record.url?scp=85048887323&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.8b00874

DO - 10.1021/acs.nanolett.8b00874

M3 - Article

VL - 18

SP - 4141

EP - 4147

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 7

ER -

ID: 27289875