Giant resistive switching effects in symmetric all-oxide tunnel junctions with La2/3Sr1/3MnO3 electrodes

Q. Qin, L. Akaslompolo, L. Yao, S. Majumdar, J. Vijayakumar, B. Chen, S. Van Dijken

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussaConference contributionScientificvertaisarvioitu


Ferroelectric tunnel junctions have opened up promising routes towards energy-efficient data storage applications and memristive devices [1]. Polarization reversal in a ferroelectric tunnel barrier can change the electrical resistance of a junction, a phenomenon known as tunneling electroresistance (TER). On the other hand, redox-based effects such as the migration of oxygen vacancies can cause large resistive switching in transition metal oxides [2]. Here, we demonstrate nearly identical switching behavior in nominally symmetric tunnel junctions that are comprised of two La2/3Sr1/3M-nO3 (LSMO) electrodes separated by a ferroelectric PbZr0.2Ti0.8O3 (PZT) or BaTiO3 (BTO) tunnel barrier, or a paraelectric SrTiO3 (STO) tunnel barrier. The tunnel junctions were grown by pulsed laser deposition and patterned into solid junctions with a lateral dimension of 20 × 40 μm2, 30 × 60 μm2, and 40 × 80 μm2. Moreover, LSMO/PZT and LSMO/BTO bilayer were patterned into Hall bar structures for in-plane electric transport measurements inside a scanning probe microscope.

Otsikko2015 IEEE International Magnetics Conference, INTERMAG 2015
ISBN (elektroninen)9781479973224
DOI - pysyväislinkit
TilaJulkaistu - 14 heinäkuuta 2015
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaIEEE International Magnetics Conference - Beijing, Kiina
Kesto: 11 toukokuuta 201515 toukokuuta 2015


ConferenceIEEE International Magnetics Conference


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