Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

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Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy. / Tuomisto, Filip; Karjalainen, Antti; Prozheeva, Vera; Makkonen, Ilja; Wagner, Gunter; Baldini, Michele.

Oxide-Based Materials and Devices X. toim. / David J. Rogers; Ferechteh H. Teherani; David C. Look. 2019. s. 1-8 1091910 (Proceedings of SPIE; Vuosikerta 10919).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

Harvard

Tuomisto, F, Karjalainen, A, Prozheeva, V, Makkonen, I, Wagner, G & Baldini, M 2019, Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy. julkaisussa DJ Rogers, FH Teherani & DC Look (toim), Oxide-Based Materials and Devices X., 1091910, Proceedings of SPIE, Vuosikerta. 10919, Sivut 1-8, San Francisco, Yhdysvallat, 03/02/2019. https://doi.org/10.1117/12.2518888

APA

Tuomisto, F., Karjalainen, A., Prozheeva, V., Makkonen, I., Wagner, G., & Baldini, M. (2019). Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy. teoksessa D. J. Rogers, F. H. Teherani, & D. C. Look (Toimittajat), Oxide-Based Materials and Devices X (Sivut 1-8). [1091910] (Proceedings of SPIE; Vuosikerta 10919). https://doi.org/10.1117/12.2518888

Vancouver

Tuomisto F, Karjalainen A, Prozheeva V, Makkonen I, Wagner G, Baldini M. Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy. julkaisussa Rogers DJ, Teherani FH, Look DC, toimittajat, Oxide-Based Materials and Devices X. 2019. s. 1-8. 1091910. (Proceedings of SPIE). https://doi.org/10.1117/12.2518888

Author

Tuomisto, Filip ; Karjalainen, Antti ; Prozheeva, Vera ; Makkonen, Ilja ; Wagner, Gunter ; Baldini, Michele. / Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy. Oxide-Based Materials and Devices X. Toimittaja / David J. Rogers ; Ferechteh H. Teherani ; David C. Look. 2019. Sivut 1-8 (Proceedings of SPIE).

Bibtex - Lataa

@inproceedings{b092b328a2724d1b903acc12d0b7fbe8,
title = "Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy",
abstract = "We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .",
keywords = "Compensation, Defect, Gallium oxide, Positron annihilation spectroscopy, Vacancy",
author = "Filip Tuomisto and Antti Karjalainen and Vera Prozheeva and Ilja Makkonen and Gunter Wagner and Michele Baldini",
year = "2019",
month = "1",
day = "1",
doi = "10.1117/12.2518888",
language = "English",
series = "Proceedings of SPIE",
publisher = "SPIE",
pages = "1--8",
editor = "Rogers, {David J.} and Teherani, {Ferechteh H.} and Look, {David C.}",
booktitle = "Oxide-Based Materials and Devices X",

}

RIS - Lataa

TY - GEN

T1 - Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy

AU - Tuomisto, Filip

AU - Karjalainen, Antti

AU - Prozheeva, Vera

AU - Makkonen, Ilja

AU - Wagner, Gunter

AU - Baldini, Michele

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .

AB - We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .

KW - Compensation

KW - Defect

KW - Gallium oxide

KW - Positron annihilation spectroscopy

KW - Vacancy

UR - http://www.scopus.com/inward/record.url?scp=85065764347&partnerID=8YFLogxK

U2 - 10.1117/12.2518888

DO - 10.1117/12.2518888

M3 - Conference contribution

T3 - Proceedings of SPIE

SP - 1

EP - 8

BT - Oxide-Based Materials and Devices X

A2 - Rogers, David J.

A2 - Teherani, Ferechteh H.

A2 - Look, David C.

ER -

ID: 34203988