Ga vacancies and electrical compensation in β-Ga                         
                        2
                                                 O                         
                        3
                                                  thin films studied with positron annihilation spectroscopy

Filip Tuomisto; Antti Karjalainen; Vera Prozheeva; Ilja Makkonen; Gunter Wagner; Michele Baldini

doi:10.1117/12.2518888

Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy

Filip Tuomisto, Antti Karjalainen, Vera Prozheeva, Ilja Makkonen, Gunter Wagner, Michele Baldini

Teknillisen fysiikan laitos

Leibniz Institute for Crystal Growth

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

13 Sitaatiot (Scopus)

378 Lataukset (Pure)

Abstrakti

We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga ₂ O ₃ homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga ₂ O ₃ .

Alkuperäiskieli	Englanti
Otsikko	Oxide-Based Materials and Devices X
Toimittajat	David J. Rogers, Ferechteh H. Teherani, David C. Look
Kustantaja	SPIE
Sivut	1-8
ISBN (elektroninen)	9781510624801
DOI - pysyväislinkit	https://doi.org/10.1117/12.2518888
Tila	Julkaistu - 1 tammik. 2019
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Oxide-Based Materials and Devices - San Francisco, Yhdysvallat Kesto: 3 helmik. 2019 → 7 helmik. 2019 Konferenssinumero: 10

Julkaisusarja

Nimi	Proceedings of SPIE
Kustantaja	SPIE
Vuosikerta	10919
ISSN (painettu)	0277-786X
ISSN (elektroninen)	1996-756X

Conference

Conference	Oxide-Based Materials and Devices
Maa/Alue	Yhdysvallat
Kaupunki	San Francisco
Ajanjakso	03/02/2019 → 07/02/2019

Pääsy asiakirjaan

10.1117/12.2518888

1091910Final published version, 581 KB

Muut tiedostot ja linkit

Link to publication in Scopus

Suuren mittakaavan elektronirakennelaskutekniikat materiaalien karakterisoinnin avuksi
Makkonen, I. (Vastuullinen tutkija) & Simula, K. (Projektin jäsen)
01/09/2018 → 31/08/2019
Projekti: Academy of Finland: Other research funding
Suuren mittakaavan elektronirakennelaskutekniikat materiaalien karakterisoinnin avuksi
Makkonen, I. (Vastuullinen tutkija)
01/09/2015 → 31/08/2019
Projekti: Academy of Finland: Other research funding
Suuren mittakaavan elektronirakennelaskutekniikat materiaalien karakterisoinnin avuksi
Makkonen, I. (Vastuullinen tutkija), Prozheeva, V. (Projektin jäsen), Härkönen, J. (Projektin jäsen) & Simula, K. (Projektin jäsen)
01/09/2015 → 31/08/2018
Projekti: Academy of Finland: Other research funding

Siteeraa tätä

Tuomisto, F., Karjalainen, A., Prozheeva, V., Makkonen, I., Wagner, G., & Baldini, M. (2019). Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy. teoksessa D. J. Rogers, F. H. Teherani, & D. C. Look (Toimittajat), Oxide-Based Materials and Devices X (Sivut 1-8). Artikkeli 1091910 (Proceedings of SPIE; Vuosikerta 10919). SPIE. https://doi.org/10.1117/12.2518888

Tuomisto, Filip ; Karjalainen, Antti ; Prozheeva, Vera et al. / Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy. Oxide-Based Materials and Devices X. Toimittaja / David J. Rogers ; Ferechteh H. Teherani ; David C. Look. SPIE, 2019. Sivut 1-8 (Proceedings of SPIE).

@inproceedings{b092b328a2724d1b903acc12d0b7fbe8,

title = "Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy",

abstract = " We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 . ",

keywords = "Compensation, Defect, Gallium oxide, Positron annihilation spectroscopy, Vacancy",

author = "Filip Tuomisto and Antti Karjalainen and Vera Prozheeva and Ilja Makkonen and Gunter Wagner and Michele Baldini",

year = "2019",

month = jan,

day = "1",

doi = "10.1117/12.2518888",

language = "English",

series = "Proceedings of SPIE",

publisher = "SPIE",

pages = "1--8",

editor = "Rogers, {David J.} and Teherani, {Ferechteh H.} and Look, {David C.}",

booktitle = "Oxide-Based Materials and Devices X",

address = "United States",

note = "Oxide-Based Materials and Devices ; Conference date: 03-02-2019 Through 07-02-2019",

}

Tuomisto, F, Karjalainen, A, Prozheeva, V, Makkonen, I, Wagner, G & Baldini, M 2019, Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy. julkaisussa DJ Rogers, FH Teherani & DC Look (toim), Oxide-Based Materials and Devices X., 1091910, Proceedings of SPIE, Vuosikerta 10919, SPIE, Sivut 1-8, Oxide-Based Materials and Devices, San Francisco, California, Yhdysvallat, 03/02/2019. https://doi.org/10.1117/12.2518888

Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy. / Tuomisto, Filip; Karjalainen, Antti; Prozheeva, Vera et al.
Oxide-Based Materials and Devices X. toim. / David J. Rogers; Ferechteh H. Teherani; David C. Look. SPIE, 2019. s. 1-8 1091910 (Proceedings of SPIE; Vuosikerta 10919).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy

AU - Tuomisto, Filip

AU - Karjalainen, Antti

AU - Prozheeva, Vera

AU - Makkonen, Ilja

AU - Wagner, Gunter

AU - Baldini, Michele

N1 - Conference code: 10

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .

AB - We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .

KW - Compensation

KW - Defect

KW - Gallium oxide

KW - Positron annihilation spectroscopy

KW - Vacancy

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U2 - 10.1117/12.2518888

DO - 10.1117/12.2518888

M3 - Conference article in proceedings

AN - SCOPUS:85065764347

T3 - Proceedings of SPIE

SP - 1

EP - 8

BT - Oxide-Based Materials and Devices X

A2 - Rogers, David J.

A2 - Teherani, Ferechteh H.

A2 - Look, David C.

PB - SPIE

T2 - Oxide-Based Materials and Devices

Y2 - 3 February 2019 through 7 February 2019

ER -

Tuomisto F, Karjalainen A, Prozheeva V, Makkonen I, Wagner G, Baldini M. Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy. julkaisussa Rogers DJ, Teherani FH, Look DC, toimittajat, Oxide-Based Materials and Devices X. SPIE. 2019. s. 1-8. 1091910. (Proceedings of SPIE). doi: 10.1117/12.2518888

Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy

Abstrakti

Julkaisusarja

Conference

Pääsy asiakirjaan

Muut tiedostot ja linkit

Sormenjälki

Projektit

Suuren mittakaavan elektronirakennelaskutekniikat materiaalien karakterisoinnin avuksi

Suuren mittakaavan elektronirakennelaskutekniikat materiaalien karakterisoinnin avuksi

Suuren mittakaavan elektronirakennelaskutekniikat materiaalien karakterisoinnin avuksi

Siteeraa tätä

Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy