Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

Serguei Novikov; Juha Sinkkonen; T. Nikitin; L. Khriachtchev; Eero Haimi; M. Raisanen

Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

Serguei Novikov, Juha Sinkkonen, T. Nikitin, L. Khriachtchev, Eero Haimi, M. Raisanen

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

15 Sitaatiot (Scopus)

Abstrakti

Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. (C) 2007 Elsevier Ltd. All rights reserved.

Alkuperäiskieli	Englanti
Sivut	518-522
Julkaisu	Microelectronics Journal
Vuosikerta	39
Numero	3-4
Tila	Julkaistu - 2008
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Siteeraa tätä

@article{97edcbc45bb54436b0edd01c6f23ce4f,

title = "Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy",

abstract = "Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. (C) 2007 Elsevier Ltd. All rights reserved.",

author = "Serguei Novikov and Juha Sinkkonen and T. Nikitin and L. Khriachtchev and Eero Haimi and M. Raisanen",

year = "2008",

language = "English",

volume = "39",

pages = "518--522",

journal = "Microelectronics Journal",

issn = "0959-8324",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

AU - Novikov, Serguei

AU - Sinkkonen, Juha

AU - Nikitin, T.

AU - Khriachtchev, L.

AU - Haimi, Eero

AU - Raisanen, M.

PY - 2008

Y1 - 2008

N2 - Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. (C) 2007 Elsevier Ltd. All rights reserved.

AB - Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. (C) 2007 Elsevier Ltd. All rights reserved.

M3 - Article

SN - 0959-8324

VL - 39

SP - 518

EP - 522

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3-4

ER -

Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

Abstrakti

Sormenjälki

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