Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si

V. Ranki; J. Nissilä; K. Saarinen

Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si

V. Ranki
, J. Nissilä
, K. Saarinen

Teknillisen fysiikan laitos

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

60 Sitaatiot (Scopus)

Alkuperäiskieli	Englanti
Julkaisu	Physical Review Letters
Vuosikerta	88
Tila	Julkaistu - 2002
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Tutkimusalat

compensation
defect
positron
silicon

Muut tiedostot ja linkit

http://link.aps.org/abstract/PRL/v88/e105506

Siteeraa tätä

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title = "Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si",

keywords = "compensation, defect, positron, silicon, compensation, defect, positron, silicon, compensation, defect, positron, silicon",

author = "V. Ranki and J. Nissil{\"a} and K. Saarinen",

year = "2002",

language = "English",

volume = "88",

journal = "Physical Review Letters",

issn = "1079-7114",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si

AU - Ranki, V.

AU - Nissilä, J.

AU - Saarinen, K.

PY - 2002

Y1 - 2002

KW - compensation

KW - defect

KW - positron

KW - silicon

KW - compensation

KW - defect

KW - positron

KW - silicon

KW - compensation

KW - defect

KW - positron

KW - silicon

UR - http://link.aps.org/abstract/PRL/v88/e105506

M3 - Article

SN - 1079-7114

SN - 1092-0145

VL - 88

JO - Physical Review Letters

JF - Physical Review Letters

ER -