Formation of Ohmic Contacts to n-GaAS using (NH(4))2S Surface Passivation

V. Fischer; P.H. Holloway; E.O. Ristolainen; D. Schoenfeld

Formation of Ohmic Contacts to n-GaAS using (NH(4))2S Surface Passivation

V. Fischer
, P.H. Holloway
, E.O. Ristolainen
, D. Schoenfeld

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Alkuperäiskieli	Englanti
Otsikko	39th AVS National Symposium, 9-13 Nov.
Tila	Julkaistu - 1994
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa

Tutkimusalat

GaAS alloy
ohmic contact
surface passivation

Siteeraa tätä

@inproceedings{9bf12585fd61427d9cbafdac76ee470c,

title = "Formation of Ohmic Contacts to n-GaAS using (NH(4))2S Surface Passivation",

keywords = "GaAS alloy, ohmic contact, surface passivation, GaAS alloy, ohmic contact, surface passivation, GaAS alloy, ohmic contact, surface passivation",

author = "V. Fischer and P.H. Holloway and E.O. Ristolainen and D. Schoenfeld",

year = "1994",

language = "English",

booktitle = "39th AVS National Symposium, 9-13 Nov.",

}

TY - GEN

T1 - Formation of Ohmic Contacts to n-GaAS using (NH(4))2S Surface Passivation

AU - Fischer, V.

AU - Holloway, P.H.

AU - Ristolainen, E.O.

AU - Schoenfeld, D.

PY - 1994

Y1 - 1994

KW - GaAS alloy

KW - ohmic contact

KW - surface passivation

KW - GaAS alloy

KW - ohmic contact

KW - surface passivation

KW - GaAS alloy

KW - ohmic contact

KW - surface passivation

M3 - Conference article in proceedings

BT - 39th AVS National Symposium, 9-13 Nov.

ER -