Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Julkaisupaikka	Espoo
Sivut	25
Tila	Julkaistu - 1994
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Nimi	VTT electronics Internal Report
Kustantaja	VTT

Tutkimusalat

@techreport{fd02380b4b4941109891316ddb884f10,

title = "Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation",

keywords = "ion implantation, silicon-germanium, ion implantation, silicon-germanium, ion implantation, silicon-germanium",

author = "Z. Xia and E. Ristolainen and S. Er{\"a}nen and H. Ronkainen and R. Elliman and M. Sopanen and T. Tuomi",

year = "1994",

language = "English",

series = "VTT electronics Internal Report",

publisher = "VTT",

pages = "25",

type = "WorkingPaper",

institution = "VTT",

}

TY - UNPB

T1 - Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation

AU - Xia, Z.

AU - Ristolainen, E.

AU - Eränen, S.

AU - Ronkainen, H.

AU - Elliman, R.

AU - Sopanen, M.

AU - Tuomi, T.

PY - 1994

Y1 - 1994

KW - ion implantation, silicon-germanium

M3 - Working paper

T3 - VTT electronics Internal Report

SP - 25

BT - Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation

CY - Espoo

ER -