Abstrakti
Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.
Alkuperäiskieli | Englanti |
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Otsikko | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
Kustantaja | IEEE |
Sivut | 678-680 |
Sivumäärä | 3 |
Vuosikerta | 2016-November |
ISBN (elektroninen) | 9781509027248 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 18 marraskuuta 2016 |
OKM-julkaisutyyppi | A4 Artikkeli konferenssijulkaisuussa |
Tapahtuma | IEEE Photovoltaic Specialists Conference - Portland, Yhdysvallat Kesto: 5 kesäkuuta 2016 → 10 kesäkuuta 2016 Konferenssinumero: 43 |
Julkaisusarja
Nimi | Conference record of the IEEE Photovoltaic Specialists Conference |
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ISSN (painettu) | 0160-8371 |
Conference
Conference | IEEE Photovoltaic Specialists Conference |
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Lyhennettä | PVSC |
Maa | Yhdysvallat |
Kaupunki | Portland |
Ajanjakso | 05/06/2016 → 10/06/2016 |