TY - JOUR
T1 - Finite element simulation of solid-liquid interdiffusion bonding process
T2 - Understanding process dependent thermomechanical stress
AU - Tiwary, Nikhilendu
AU - Vuorinen, Vesa
AU - Ross, Glenn
AU - Paulasto-Krockel, Mervi
N1 - Publisher Copyright:
Author
PY - 2022/5/1
Y1 - 2022/5/1
N2 - Solid-liquid interdiffusion (SLID) bonding finds a wide variety of potential applications toward die-attach, hermetic encapsulation of microelectromechanical systems (MEMS) devices and 3-D heterogeneous integration. Unlike soft soldering technique, the solidification of intermetallic compound (IMC) formation in SLID bonding occurs during the process isothermally, making it difficult to predict and mitigate the sources of process-dependent thermomechanical stresses. Literature reports two dominant factors for the built-in stress in SLID bonds: volume shrinkage (due to IMC formation) and coefficient of thermal expansion (CTE) mismatch. This work provides a detailed investigation of the Cu-Sn SLID bonding process by finite element (FE) simulations. Specifically, the FE simulation of the SLID bonding process is divided into three steps: ramp-up, hold-time, and ramp-down stages to understand the stresses formed due to each individual step. Plastic material properties for Cu as well as temperature-dependent material parameters for different entities are assigned. Process-dependent thermomechanical stresses formed during the ramp-up and hold-time steps (IMC formation) were found not to be significant. The hold-time step is governed by the reaction and diffusion kinetics, which determines the bond line quality including defects, such as voids. The ramp-down step is the dominant phase influencing the final stress formations in the bonds. The results show an average of >30% decrease in the stress levels in Cu3Sn layer (IMC) when the bonding temperature is brought down from 320 °C to 200 °C, thus demonstrating the importance of low-temperature SLID process.
AB - Solid-liquid interdiffusion (SLID) bonding finds a wide variety of potential applications toward die-attach, hermetic encapsulation of microelectromechanical systems (MEMS) devices and 3-D heterogeneous integration. Unlike soft soldering technique, the solidification of intermetallic compound (IMC) formation in SLID bonding occurs during the process isothermally, making it difficult to predict and mitigate the sources of process-dependent thermomechanical stresses. Literature reports two dominant factors for the built-in stress in SLID bonds: volume shrinkage (due to IMC formation) and coefficient of thermal expansion (CTE) mismatch. This work provides a detailed investigation of the Cu-Sn SLID bonding process by finite element (FE) simulations. Specifically, the FE simulation of the SLID bonding process is divided into three steps: ramp-up, hold-time, and ramp-down stages to understand the stresses formed due to each individual step. Plastic material properties for Cu as well as temperature-dependent material parameters for different entities are assigned. Process-dependent thermomechanical stresses formed during the ramp-up and hold-time steps (IMC formation) were found not to be significant. The hold-time step is governed by the reaction and diffusion kinetics, which determines the bond line quality including defects, such as voids. The ramp-down step is the dominant phase influencing the final stress formations in the bonds. The results show an average of >30% decrease in the stress levels in Cu3Sn layer (IMC) when the bonding temperature is brought down from 320 °C to 200 °C, thus demonstrating the importance of low-temperature SLID process.
KW - Bonding
KW - Cu-Sn
KW - FE simulations
KW - heterogeneous integration
KW - Iron
KW - Plastics
KW - Silicon
KW - Solid modeling
KW - Solid-liquid interdiffusion bonding (SLID)
KW - Stress
KW - Thermomechanical processes
KW - thermomechanical stress
UR - http://www.scopus.com/inward/record.url?scp=85129443584&partnerID=8YFLogxK
U2 - 10.1109/TCPMT.2022.3170082
DO - 10.1109/TCPMT.2022.3170082
M3 - Article
AN - SCOPUS:85129443584
SN - 2156-3950
VL - 12
SP - 847
EP - 856
JO - IEEE Transactions on Components, Packaging and Manufacturing Technology
JF - IEEE Transactions on Components, Packaging and Manufacturing Technology
IS - 5
ER -