Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2

Karsten Arts; Mikko Utriainen; Riikka L. Puurunen; Wilhelmus M.M. Kessels; Harm C.M. Knoops

doi:10.1021/acs.jpcc.9b08176

Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO₂, TiO₂, Al₂O₃, and HfO₂

Karsten Arts
, Mikko Utriainen
, Riikka L. Puurunen
, Wilhelmus M.M. Kessels
, Harm C.M. Knoops^*

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

49 Sitaatiot (Scopus)

173 Lataukset (Pure)

Abstrakti

Surface recombination of plasma radicals is generally considered to limit film conformality during plasma-assisted atomic layer deposition (ALD). Here, we experimentally studied film penetration into high-aspect-ratio structures and demonstrated that it can give direct information on the recombination probability r of plasma radicals on the growth surface. This is shown for recombination of oxygen (O) atoms on SiO₂, TiO₂, Al₂O₃, and HfO₂ where a strong material dependence has been observed. Using extended plasma exposures, films of SiO₂ and TiO₂ penetrated extremely deep up to an aspect ratio (AR) of â900, and similar surface recombination probabilities of r = (6 ± 2) × 10^-5 and (7 ± 4) × 10^-5 were determined for these processes. Growth of Al₂O₃ and HfO₂ was conformal up to depths corresponding to ARs of â80 and â40, with r estimated at (1-10) × 10^-3 and (0.1-10) × 10^-2, respectively. Such quantitative insight into surface recombination, as provided by our method, is essential for modeling radical-surface interaction and understanding for which materials and conditions conformal film growth is feasible by plasma-assisted ALD.

Alkuperäiskieli	Englanti
Sivut	27030-27035
Sivumäärä	6
Julkaisu	Journal of Physical Chemistry C
Vuosikerta	123
Numero	44
DOI - pysyväislinkit	https://doi.org/10.1021/acs.jpcc.9b08176
Tila	Julkaistu - 7 marrask. 2019
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

This work is part of the research program HTSM with Project No. 15352, which is (partly) financed by the Netherlands Organization for Scientific Research (NWO). PillarHall LHAR fabrication was carried out in the OtaNano research infrastructure. VTT acknowledges the financial support for developing the LHAR4 conformality test structure from Business Finland (National Innovation Funding Center of Finland, previously Tekes) through the PillarHall TUTL project.

Pääsy asiakirjaan

10.1021/acs.jpcc.9b08176Lisenssi: CC BY-NC-ND

CHEM-Arts et al-Film Conformality-2019-PhyChemCFinal published version, 1,73 MBLisenssi: CC BY-NC-ND

Muut tiedostot ja linkit

Link to publication in Scopus

OtaNano Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Laitteistot/tilat: Facility

Siteeraa tätä

@article{8589f717734d43fb892cbdd22f10af7f,

title = "Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2",

abstract = "Surface recombination of plasma radicals is generally considered to limit film conformality during plasma-assisted atomic layer deposition (ALD). Here, we experimentally studied film penetration into high-aspect-ratio structures and demonstrated that it can give direct information on the recombination probability r of plasma radicals on the growth surface. This is shown for recombination of oxygen (O) atoms on SiO2, TiO2, Al2O3, and HfO2 where a strong material dependence has been observed. Using extended plasma exposures, films of SiO2 and TiO2 penetrated extremely deep up to an aspect ratio (AR) of {\^a}900, and similar surface recombination probabilities of r = (6 ± 2) × 10-5 and (7 ± 4) × 10-5 were determined for these processes. Growth of Al2O3 and HfO2 was conformal up to depths corresponding to ARs of {\^a}80 and {\^a}40, with r estimated at (1-10) × 10-3 and (0.1-10) × 10-2, respectively. Such quantitative insight into surface recombination, as provided by our method, is essential for modeling radical-surface interaction and understanding for which materials and conditions conformal film growth is feasible by plasma-assisted ALD.",

author = "Karsten Arts and Mikko Utriainen and Puurunen, \{Riikka L.\} and Kessels, \{Wilhelmus M.M.\} and Knoops, \{Harm C.M.\}",

year = "2019",

month = nov,

day = "7",

doi = "10.1021/acs.jpcc.9b08176",

language = "English",

volume = "123",

pages = "27030--27035",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "44",

}

Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO₂, TiO₂, Al₂O₃, and HfO₂. / Arts, Karsten; Utriainen, Mikko; Puurunen, Riikka L. et al.
julkaisussa: Journal of Physical Chemistry C, Vuosikerta 123, Nro 44, 07.11.2019, s. 27030-27035.

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

TY - JOUR

T1 - Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2

AU - Arts, Karsten

AU - Utriainen, Mikko

AU - Puurunen, Riikka L.

AU - Kessels, Wilhelmus M.M.

AU - Knoops, Harm C.M.

PY - 2019/11/7

Y1 - 2019/11/7

N2 - Surface recombination of plasma radicals is generally considered to limit film conformality during plasma-assisted atomic layer deposition (ALD). Here, we experimentally studied film penetration into high-aspect-ratio structures and demonstrated that it can give direct information on the recombination probability r of plasma radicals on the growth surface. This is shown for recombination of oxygen (O) atoms on SiO2, TiO2, Al2O3, and HfO2 where a strong material dependence has been observed. Using extended plasma exposures, films of SiO2 and TiO2 penetrated extremely deep up to an aspect ratio (AR) of â900, and similar surface recombination probabilities of r = (6 ± 2) × 10-5 and (7 ± 4) × 10-5 were determined for these processes. Growth of Al2O3 and HfO2 was conformal up to depths corresponding to ARs of â80 and â40, with r estimated at (1-10) × 10-3 and (0.1-10) × 10-2, respectively. Such quantitative insight into surface recombination, as provided by our method, is essential for modeling radical-surface interaction and understanding for which materials and conditions conformal film growth is feasible by plasma-assisted ALD.

AB - Surface recombination of plasma radicals is generally considered to limit film conformality during plasma-assisted atomic layer deposition (ALD). Here, we experimentally studied film penetration into high-aspect-ratio structures and demonstrated that it can give direct information on the recombination probability r of plasma radicals on the growth surface. This is shown for recombination of oxygen (O) atoms on SiO2, TiO2, Al2O3, and HfO2 where a strong material dependence has been observed. Using extended plasma exposures, films of SiO2 and TiO2 penetrated extremely deep up to an aspect ratio (AR) of â900, and similar surface recombination probabilities of r = (6 ± 2) × 10-5 and (7 ± 4) × 10-5 were determined for these processes. Growth of Al2O3 and HfO2 was conformal up to depths corresponding to ARs of â80 and â40, with r estimated at (1-10) × 10-3 and (0.1-10) × 10-2, respectively. Such quantitative insight into surface recombination, as provided by our method, is essential for modeling radical-surface interaction and understanding for which materials and conditions conformal film growth is feasible by plasma-assisted ALD.

UR - https://www.scopus.com/pages/publications/85074789607

U2 - 10.1021/acs.jpcc.9b08176

DO - 10.1021/acs.jpcc.9b08176

M3 - Article

AN - SCOPUS:85074789607

SN - 1932-7447

VL - 123

SP - 27030

EP - 27035

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 44

ER -