Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy

Alexei Bouravleuv, George Cirlin, Victor Sapega, Peter Werner, Alexander Savin, Harri Lipsanen

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

10 Sitaatiot (Scopus)
21 Lataukset (Pure)

Abstrakti

(Ga,Mn)As nanowires were grown by molecular beam epitaxy using Mn as a growth catalyst on GaAs(001) substrates at 485 °C, i.e., at intermediate temperatures higher than ones used for the growth of (Ga,Mn)As thin films, but lower than the ordinary temperatures of Au-assisted growth of GaAs nanowires. (Ga,Mn)As nanowires obtained with typical lengths between 0.8 and 4 μm and diameters 50–90 nm do not have defects, such as dislocations or precipitates, except for the stacking faults lying parallel to the growth direction. The investigation of magnetic and optical properties has been carried out not only for as-grown samples with nanowires but also for peeled off nanowires from the host substrate. The results obtained demonstrate that (Ga,Mn)As nanowires exhibit ferromagnetic ordering around 70 K.
AlkuperäiskieliEnglanti
Artikkeli144303
Sivut1-6
Sivumäärä6
JulkaisuJournal of Applied Physics
Vuosikerta113
Numero14
DOI - pysyväislinkit
TilaJulkaistu - 2013
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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