Fabrication of thick insulating membrane embedded in Si substrate

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu




The present paper is devoted to the description of a fabrication process of thick (tens of micrometers) insulating SiO2 membrane embedded in a c-Si substrate. The membrane processing consists of total thermal oxidation of trenches, which were preliminary etched on front side of the substrate, conformal deposition of dielectric layer for SiO2 trenches closing and selective etching of c-Si from back side of the substrate. The proposed process provides high accuracy of membrane thickness control and can be used in monolithic integration of dielectric based passive components with active semiconductor elements. Measurement results demonstrate that thermal insulation similar to that of glass substrate can be reached.


Otsikko4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010
TilaJulkaistu - 2010
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaInternational Conference on Quantum, Nano and Micro Technologies - St. Maarten
Kesto: 10 helmikuuta 201016 helmikuuta 2010
Konferenssinumero: 4


ConferenceInternational Conference on Quantum, Nano and Micro Technologies
KaupunkiSt. Maarten

ID: 14466801