Experimental investigation of traps in THz Schottky diodes

Subash Khanal; Tero Kiuru; Heikki Seppä; Juha Mallat; Petri Piironen; Antti Räisänen

doi:10.1109/GSMM.2016.7500306

Experimental investigation of traps in THz Schottky diodes

Subash Khanal, Tero Kiuru, Heikki Seppä, Juha Mallat, Petri Piironen, Antti Räisänen

Keijo Nikoskinen Group

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Abstrakti

In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

Alkuperäiskieli	Englanti
Otsikko	2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
Kustantaja	IEEE
ISBN (elektroninen)	9781509013487
DOI - pysyväislinkit	https://doi.org/10.1109/GSMM.2016.7500306
Tila	Julkaistu - 27 kesäk. 2016
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Suomi Kesto: 6 kesäk. 2016 → 8 kesäk. 2016 http://gsmm2016.aalto.fi/

Conference

Conference	9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications
Lyhennettä	GSMM
Maa/Alue	Suomi
Kaupunki	Espoo
Ajanjakso	06/06/2016 → 08/06/2016
www-osoite	http://gsmm2016.aalto.fi/

Pääsy asiakirjaan

10.1109/GSMM.2016.7500306

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Rissanen, A. (Manager)
Aalto-yliopisto
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@inproceedings{cd038774e040478d8e0f6f7d418a9af5,

title = "Experimental investigation of traps in THz Schottky diodes",

abstract = "In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.",

keywords = "Low-frequency noise, measurement, Schottky diode, traps",

author = "Subash Khanal and Tero Kiuru and Heikki Sepp{\"a} and Juha Mallat and Petri Piironen and Antti R{\"a}is{\"a}nen",

year = "2016",

month = jun,

day = "27",

doi = "10.1109/GSMM.2016.7500306",

language = "English",

booktitle = "2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications",

publisher = "IEEE",

address = "United States",

note = "9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications, GSMM ; Conference date: 06-06-2016 Through 08-06-2016",

url = "http://gsmm2016.aalto.fi/",

}

Khanal, S, Kiuru, T, Seppä, H, Mallat, J, Piironen, P & Räisänen, A 2016, Experimental investigation of traps in THz Schottky diodes. julkaisussa 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications., 7500306, IEEE, 9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications, Espoo, Suomi, 06/06/2016. https://doi.org/10.1109/GSMM.2016.7500306

Experimental investigation of traps in THz Schottky diodes. / Khanal, Subash; Kiuru, Tero; Seppä, Heikki et al.
2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications. IEEE, 2016. 7500306.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Experimental investigation of traps in THz Schottky diodes

AU - Khanal, Subash

AU - Kiuru, Tero

AU - Seppä, Heikki

AU - Mallat, Juha

AU - Piironen, Petri

AU - Räisänen, Antti

PY - 2016/6/27

Y1 - 2016/6/27

N2 - In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

AB - In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

KW - Low-frequency noise

KW - measurement

KW - Schottky diode

KW - traps

UR - http://www.scopus.com/inward/record.url?scp=84979608084&partnerID=8YFLogxK

U2 - 10.1109/GSMM.2016.7500306

DO - 10.1109/GSMM.2016.7500306

M3 - Conference article in proceedings

AN - SCOPUS:84979608084

BT - 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications

PB - IEEE

T2 - 9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications

Y2 - 6 June 2016 through 8 June 2016

ER -

Experimental investigation of traps in THz Schottky diodes

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Conference

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