Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiode

Kexun Chen, Olli Setälä, Xiaolong Liu, Behrad Radfar, Toni Pasanen, Michael Serue, Juha Heinonen, Hele Savin, Ville Vähänissi

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

2 Sitaatiot (Scopus)
60 Lataukset (Pure)

Abstrakti

Metal-assisted chemical etched (MACE; also known as MacEtch or MCCE) nanostructures are utilized widely in the solar cell industry due to their excellent optical properties combined with a simple and cost-efficient fabrication process. The photodetection community, on the other hand, has not shown much interest toward MACE due to its drawbacks, including insufficient surface passivation, increased junction recombination, and possible metal contamination, which are especially detrimental to p-n photodiodes. Here, we aim to change this by demonstrating how to fabricate high-performance MACE p-n photodiodes with above 90% external quantum efficiency (EQE) without external bias voltage at 200-1000 nm and dark current less than 3 nA/cm2 at -5 V using industrially applicable methods. The key is to utilize an induced junction created by an atomic layer deposited (ALD) highly charged Al2O3 thin film that simultaneously provides efficient field-effect passivation and full conformality over the MACE nanostructures. Achieving close to ideal performance demonstrates the vast potential of MACE nanostructures in the fabrication of high-performance low-cost p-n photodiodes.

AlkuperäiskieliEnglanti
Sivut6750-6756
Sivumäärä7
JulkaisuIEEE Sensors Journal
Vuosikerta23
Numero7
Varhainen verkossa julkaisun päivämäärä2023
DOI - pysyväislinkit
TilaJulkaistu - 1 huhtik. 2023
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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