Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

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Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition. / Rönn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei.

Integrated Optics: Devices, Materials, and Technologies XX. toim. / Jean-Emmanuel Broquin; Gualtiero Nunzi Conti. Vuosikerta 9750 2016. 97500P (SPIE conference proceedings; Vuosikerta 9750).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

Harvard

Rönn, J, Karvonen, L, Pyymäki-Perros, A, Peyghambarian, N, Lipsanen, H, Säynätjoki, A & Sun, Z 2016, Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition. julkaisussa J-E Broquin & GN Conti (toim), Integrated Optics: Devices, Materials, and Technologies XX. Vuosikerta. 9750, 97500P, SPIE conference proceedings, Vuosikerta. 9750, San Francisco, Yhdysvallat, 15/02/2016. https://doi.org/10.1117/12.2212990

APA

Rönn, J., Karvonen, L., Pyymäki-Perros, A., Peyghambarian, N., Lipsanen, H., Säynätjoki, A., & Sun, Z. (2016). Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition. teoksessa J-E. Broquin, & G. N. Conti (Toimittajat), Integrated Optics: Devices, Materials, and Technologies XX (Vuosikerta 9750). [97500P] (SPIE conference proceedings; Vuosikerta 9750). https://doi.org/10.1117/12.2212990

Vancouver

Rönn J, Karvonen L, Pyymäki-Perros A, Peyghambarian N, Lipsanen H, Säynätjoki A et al. Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition. julkaisussa Broquin J-E, Conti GN, toimittajat, Integrated Optics: Devices, Materials, and Technologies XX. Vuosikerta 9750. 2016. 97500P. (SPIE conference proceedings). https://doi.org/10.1117/12.2212990

Author

Rönn, John ; Karvonen, Lasse ; Pyymäki-Perros, Alexander ; Peyghambarian, Nasser ; Lipsanen, Harri ; Säynätjoki, Antti ; Sun, Zhipei. / Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition. Integrated Optics: Devices, Materials, and Technologies XX. Toimittaja / Jean-Emmanuel Broquin ; Gualtiero Nunzi Conti. Vuosikerta 9750 2016. (SPIE conference proceedings).

Bibtex - Lataa

@inproceedings{edf75fd25f6b408aa9cad2a56fd9325b,
title = "Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition",
abstract = "We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90{\%} when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.",
keywords = "atomic layer deposition, Erbium, integrated optics, optical amplifier, photoluminescence",
author = "John R{\"o}nn and Lasse Karvonen and Alexander Pyym{\"a}ki-Perros and Nasser Peyghambarian and Harri Lipsanen and Antti S{\"a}yn{\"a}tjoki and Zhipei Sun",
year = "2016",
doi = "10.1117/12.2212990",
language = "English",
volume = "9750",
series = "SPIE conference proceedings",
publisher = "SPIE",
editor = "Jean-Emmanuel Broquin and Conti, {Gualtiero Nunzi}",
booktitle = "Integrated Optics: Devices, Materials, and Technologies XX",

}

RIS - Lataa

TY - GEN

T1 - Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

AU - Rönn, John

AU - Karvonen, Lasse

AU - Pyymäki-Perros, Alexander

AU - Peyghambarian, Nasser

AU - Lipsanen, Harri

AU - Säynätjoki, Antti

AU - Sun, Zhipei

PY - 2016

Y1 - 2016

N2 - We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

AB - We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

KW - atomic layer deposition

KW - Erbium

KW - integrated optics

KW - optical amplifier

KW - photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=84981306327&partnerID=8YFLogxK

U2 - 10.1117/12.2212990

DO - 10.1117/12.2212990

M3 - Conference contribution

VL - 9750

T3 - SPIE conference proceedings

BT - Integrated Optics: Devices, Materials, and Technologies XX

A2 - Broquin, Jean-Emmanuel

A2 - Conti, Gualtiero Nunzi

ER -

ID: 6978404