Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

Tutkijat

Organisaatiot

  • University of Eastern Finland
  • University of Arizona

Kuvaus

We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

Yksityiskohdat

AlkuperäiskieliEnglanti
OtsikkoIntegrated Optics: Devices, Materials, and Technologies XX
ToimittajatJean-Emmanuel Broquin, Gualtiero Nunzi Conti
TilaJulkaistu - 2016
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaIntegrated Optics: Devices, Materials, and Technologies - San Francisco, Yhdysvallat
Kesto: 15 helmikuuta 201617 helmikuuta 2016
Konferenssinumero: 20

Julkaisusarja

NimiSPIE conference proceedings
KustantajaSPIE
Vuosikerta9750
ISSN (painettu)0227-786X
ISSN (elektroninen)1996-756X

Conference

ConferenceIntegrated Optics
MaaYhdysvallat
KaupunkiSan Francisco
Ajanjakso15/02/201617/02/2016

ID: 6978404