Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

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Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning. / Ali, Muhammad; Riuttanen, Lauri; Kruse, M; Suihkonen, Sami; Romanov, A.E.; Törmä, Pekka T.; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.

julkaisussa: Semiconductor Science and Technology, Vuosikerta 27, Nro 8, 082002, 2012, s. 1-5.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Ali, Muhammad ; Riuttanen, Lauri ; Kruse, M ; Suihkonen, Sami ; Romanov, A.E. ; Törmä, Pekka T. ; Sopanen, Markku ; Lipsanen, Harri ; Odnoblyudov, M.A. ; Bougrov, V.E. / Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning. Julkaisussa: Semiconductor Science and Technology. 2012 ; Vuosikerta 27, Nro 8. Sivut 1-5.

Bibtex - Lataa

@article{bc3255e43f02464f82d3cd4e8ef6588c,
title = "Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning",
author = "Muhammad Ali and Lauri Riuttanen and M Kruse and Sami Suihkonen and A.E. Romanov and T{\"o}rm{\"a}, {Pekka T.} and Markku Sopanen and Harri Lipsanen and M.A. Odnoblyudov and V.E. Bougrov",
year = "2012",
doi = "10.1088/0268-1242/27/8/082002",
language = "English",
volume = "27",
pages = "1--5",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
number = "8",

}

RIS - Lataa

TY - JOUR

T1 - Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

AU - Ali, Muhammad

AU - Riuttanen, Lauri

AU - Kruse, M

AU - Suihkonen, Sami

AU - Romanov, A.E.

AU - Törmä, Pekka T.

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Odnoblyudov, M.A.

AU - Bougrov, V.E.

PY - 2012

Y1 - 2012

U2 - 10.1088/0268-1242/27/8/082002

DO - 10.1088/0268-1242/27/8/082002

M3 - Article

VL - 27

SP - 1

EP - 5

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 8

M1 - 082002

ER -

ID: 884227