Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Optogan Oy

Kuvaus

In this work, we have investigated the effect of AlGaN electron blocking layer (EBL) doping level and thickness on the optical properties of near-UV (405 nm) InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) grown by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) and electroluminescence (EL) of LEDs with a 50-nm-thick undoped GaN spacer layer between the EBL and the MQW stack were systematically studied. We will present evidence showing that the optimal EBL doping and thickness has an important role in the optimization of near-UV LED output power. By employing the optimized EBL structure we were able to enhance the EL intensity by a factor of five compared to the similar structure without the EBL. © 2008 Elsevier B.V. All rights reserved.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut5154-5157
Sivumäärä4
JulkaisuJournal of Crystal Growth
Vuosikerta310
Numero23
TilaJulkaistu - 15 marraskuuta 2008
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 3424477