Engineering Efficient p-Type TMD/Metal Contacts Using Fluorographene as a Buffer Layer

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Engineering Efficient p-Type TMD/Metal Contacts Using Fluorographene as a Buffer Layer. / Musso, Tiziana; Kumar, Priyank V.; Grossman, Jeffrey C.; Foster, Adam S.

julkaisussa: Advanced Electronic Materials, Vuosikerta 3, Nro 6, 1600318, 06.2017.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Musso, Tiziana ; Kumar, Priyank V. ; Grossman, Jeffrey C. ; Foster, Adam S. / Engineering Efficient p-Type TMD/Metal Contacts Using Fluorographene as a Buffer Layer. Julkaisussa: Advanced Electronic Materials. 2017 ; Vuosikerta 3, Nro 6.

Bibtex - Lataa

@article{baf9ba2563e64548952e2e523e63eb61,
title = "Engineering Efficient p-Type TMD/Metal Contacts Using Fluorographene as a Buffer Layer",
abstract = "P-type transistors based on high work function transition metal dichalcogenide (TMD) monolayers such as MoS2 are to date difficult to produce, owing to the strong Fermi level pinning at the semiconductor/contact metal interfaces. In this work, the potential of halogenated graphenes is demonstrated as a new class of efficient hole injection layers to TMDs such as MoS2 and WSe2 by taking fluorographene (or GF) as a model buffer layer. Using first-principles computations, two commonly obtained GF stoichiometries, C2F and CF, have been studied as buffer layers between MoS2 and Pt. In particular, for high work function TMDs such as MoS2, it has been shown that C2F forms an ohmic contact, while CF leads to a significant p-SBH value. On the other hand, for low work function TMDs such as WSe2, both C2F and CF lead to p-type ohmic contacts. This analysis shows that the ability of these buffer layers to form p-type contacts depends crucially on the charge redistribution at the GF/metal interface, which is dictated by their chemical interaction and equilibrium geometry. The fundamental electronic structures between the different semiconductor/insulator/metal interfaces which are part of this study have also been investigated.",
keywords = "TRANSITION-METAL DICHALCOGENIDES, AUGMENTED-WAVE METHOD, MOS2 TRANSISTORS, AB-INITIO, GRAPHENE OXIDE, MONOLAYER MOS2, RESISTANCE, DENSITY, MOBILITY, DEVICES",
author = "Tiziana Musso and Kumar, {Priyank V.} and Grossman, {Jeffrey C.} and Foster, {Adam S.}",
year = "2017",
month = "6",
doi = "10.1002/aelm.201600318",
language = "English",
volume = "3",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley",
number = "6",

}

RIS - Lataa

TY - JOUR

T1 - Engineering Efficient p-Type TMD/Metal Contacts Using Fluorographene as a Buffer Layer

AU - Musso, Tiziana

AU - Kumar, Priyank V.

AU - Grossman, Jeffrey C.

AU - Foster, Adam S.

PY - 2017/6

Y1 - 2017/6

N2 - P-type transistors based on high work function transition metal dichalcogenide (TMD) monolayers such as MoS2 are to date difficult to produce, owing to the strong Fermi level pinning at the semiconductor/contact metal interfaces. In this work, the potential of halogenated graphenes is demonstrated as a new class of efficient hole injection layers to TMDs such as MoS2 and WSe2 by taking fluorographene (or GF) as a model buffer layer. Using first-principles computations, two commonly obtained GF stoichiometries, C2F and CF, have been studied as buffer layers between MoS2 and Pt. In particular, for high work function TMDs such as MoS2, it has been shown that C2F forms an ohmic contact, while CF leads to a significant p-SBH value. On the other hand, for low work function TMDs such as WSe2, both C2F and CF lead to p-type ohmic contacts. This analysis shows that the ability of these buffer layers to form p-type contacts depends crucially on the charge redistribution at the GF/metal interface, which is dictated by their chemical interaction and equilibrium geometry. The fundamental electronic structures between the different semiconductor/insulator/metal interfaces which are part of this study have also been investigated.

AB - P-type transistors based on high work function transition metal dichalcogenide (TMD) monolayers such as MoS2 are to date difficult to produce, owing to the strong Fermi level pinning at the semiconductor/contact metal interfaces. In this work, the potential of halogenated graphenes is demonstrated as a new class of efficient hole injection layers to TMDs such as MoS2 and WSe2 by taking fluorographene (or GF) as a model buffer layer. Using first-principles computations, two commonly obtained GF stoichiometries, C2F and CF, have been studied as buffer layers between MoS2 and Pt. In particular, for high work function TMDs such as MoS2, it has been shown that C2F forms an ohmic contact, while CF leads to a significant p-SBH value. On the other hand, for low work function TMDs such as WSe2, both C2F and CF lead to p-type ohmic contacts. This analysis shows that the ability of these buffer layers to form p-type contacts depends crucially on the charge redistribution at the GF/metal interface, which is dictated by their chemical interaction and equilibrium geometry. The fundamental electronic structures between the different semiconductor/insulator/metal interfaces which are part of this study have also been investigated.

KW - TRANSITION-METAL DICHALCOGENIDES

KW - AUGMENTED-WAVE METHOD

KW - MOS2 TRANSISTORS

KW - AB-INITIO

KW - GRAPHENE OXIDE

KW - MONOLAYER MOS2

KW - RESISTANCE

KW - DENSITY

KW - MOBILITY

KW - DEVICES

U2 - 10.1002/aelm.201600318

DO - 10.1002/aelm.201600318

M3 - Article

VL - 3

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 6

M1 - 1600318

ER -

ID: 16986135