Eliminating light-induced degradation in commercial p-Type Czochralski silicon solar cells

Brett Hallam*, Axel Herguth, Phillip Hamer, Nitin Nampalli, Svenja Wilking, Malcolm Abbott, Stuart Wenham, Giso Hahn

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliReview ArticleScientificvertaisarvioitu

30 Sitaatiot (Scopus)
174 Lataukset (Pure)

Abstrakti

This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

AlkuperäiskieliEnglanti
Artikkeli10
JulkaisuApplied Sciences (Switzerland)
Vuosikerta8
Numero1
DOI - pysyväislinkit
TilaJulkaistu - 2018
OKM-julkaisutyyppiA2 Arvio tiedejulkaisuussa (artikkeli)

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