Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices

Tutkimustuotos: Lehtiartikkeli

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Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices. / Lehnert, Tibor; Ghorbani-Asl, Mahdi; Koester, Janis; Lee, Zhongbo; Krasheninnikov, Arkady; Kaiser, Ute.

julkaisussa: ACS Applied Nano Materials, Vuosikerta 2, Nro 5, 05.2019, s. 3262-3270.

Tutkimustuotos: Lehtiartikkeli

Harvard

Lehnert, T, Ghorbani-Asl, M, Koester, J, Lee, Z, Krasheninnikov, A & Kaiser, U 2019, 'Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices', ACS Applied Nano Materials, Vuosikerta. 2, Nro 5, Sivut 3262-3270. https://doi.org/10.1021/acsanm.9b00616

APA

Vancouver

Author

Lehnert, Tibor ; Ghorbani-Asl, Mahdi ; Koester, Janis ; Lee, Zhongbo ; Krasheninnikov, Arkady ; Kaiser, Ute. / Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices. Julkaisussa: ACS Applied Nano Materials. 2019 ; Vuosikerta 2, Nro 5. Sivut 3262-3270.

Bibtex - Lataa

@article{816ddd9b90f942e8a58d347aa6565220,
title = "Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices",
abstract = "The 40 kV high-resolution transmission electron microscopy (TEM) experiments are performed to understand defect formation and evolution of their atomic structure in single-layer 2H MoTe2 under electron beam irradiation. We show that Te vacancies can agglomerate either in single Te vacancy lines or in extended defects composed of column Te vacancies, including rotational trefoil-like defects, with some of them being never reported before. The formation of inversion domains with mirror twin boundaries of different types, along with the islands of the metallic T' phase was also observed. Our first-principles calculations provide insights into the energetics of the transformations as well as the electronic structure of the system with defects and point out that some of the observed defects have localized magnetic moments. Our results indicate that various nanoscale structures, including metallic quantum dots consisting of T' phase islands and one-dimensional metallic quantum systems such as vacancy lines and mirror twin boundaries embedded into a semiconducting host material can be realized in single-layer 2H MoTe2, and defect-associated magnetism can also be added, which may allow prospective control of optical and electronic properties of two-dimensional materials.",
keywords = "defects, 2D MoTe2, transmission electron microscopy, transition metal dichalcogenide, DFT, quantum devices, PHASE-TRANSITION, 20 KV, DEFECTS, BOUNDARIES, EMITTERS",
author = "Tibor Lehnert and Mahdi Ghorbani-Asl and Janis Koester and Zhongbo Lee and Arkady Krasheninnikov and Ute Kaiser",
year = "2019",
month = "5",
doi = "10.1021/acsanm.9b00616",
language = "English",
volume = "2",
pages = "3262--3270",
journal = "ACS Applied Nano Materials",
issn = "2574-0970",
publisher = "AMERICAN CHEMICAL SOCIETY",
number = "5",

}

RIS - Lataa

TY - JOUR

T1 - Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices

AU - Lehnert, Tibor

AU - Ghorbani-Asl, Mahdi

AU - Koester, Janis

AU - Lee, Zhongbo

AU - Krasheninnikov, Arkady

AU - Kaiser, Ute

PY - 2019/5

Y1 - 2019/5

N2 - The 40 kV high-resolution transmission electron microscopy (TEM) experiments are performed to understand defect formation and evolution of their atomic structure in single-layer 2H MoTe2 under electron beam irradiation. We show that Te vacancies can agglomerate either in single Te vacancy lines or in extended defects composed of column Te vacancies, including rotational trefoil-like defects, with some of them being never reported before. The formation of inversion domains with mirror twin boundaries of different types, along with the islands of the metallic T' phase was also observed. Our first-principles calculations provide insights into the energetics of the transformations as well as the electronic structure of the system with defects and point out that some of the observed defects have localized magnetic moments. Our results indicate that various nanoscale structures, including metallic quantum dots consisting of T' phase islands and one-dimensional metallic quantum systems such as vacancy lines and mirror twin boundaries embedded into a semiconducting host material can be realized in single-layer 2H MoTe2, and defect-associated magnetism can also be added, which may allow prospective control of optical and electronic properties of two-dimensional materials.

AB - The 40 kV high-resolution transmission electron microscopy (TEM) experiments are performed to understand defect formation and evolution of their atomic structure in single-layer 2H MoTe2 under electron beam irradiation. We show that Te vacancies can agglomerate either in single Te vacancy lines or in extended defects composed of column Te vacancies, including rotational trefoil-like defects, with some of them being never reported before. The formation of inversion domains with mirror twin boundaries of different types, along with the islands of the metallic T' phase was also observed. Our first-principles calculations provide insights into the energetics of the transformations as well as the electronic structure of the system with defects and point out that some of the observed defects have localized magnetic moments. Our results indicate that various nanoscale structures, including metallic quantum dots consisting of T' phase islands and one-dimensional metallic quantum systems such as vacancy lines and mirror twin boundaries embedded into a semiconducting host material can be realized in single-layer 2H MoTe2, and defect-associated magnetism can also be added, which may allow prospective control of optical and electronic properties of two-dimensional materials.

KW - defects

KW - 2D MoTe2

KW - transmission electron microscopy

KW - transition metal dichalcogenide

KW - DFT

KW - quantum devices

KW - PHASE-TRANSITION

KW - 20 KV

KW - DEFECTS

KW - BOUNDARIES

KW - EMITTERS

U2 - 10.1021/acsanm.9b00616

DO - 10.1021/acsanm.9b00616

M3 - Article

VL - 2

SP - 3262

EP - 3270

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

SN - 2574-0970

IS - 5

ER -

ID: 34722233