Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes

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Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes. / Mustonen, Kimmo; Markevich, Alexander; Tripathi, Mukesh; Inani, Heena; Ding, Er Xiong; Hussain, Aqeel; Mangler, Clemens; Kauppinen, Esko I.; Kotakoski, Jani; Susi, Toma.

julkaisussa: Advanced Functional Materials, 01.01.2019, s. 1-7.

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Mustonen, Kimmo ; Markevich, Alexander ; Tripathi, Mukesh ; Inani, Heena ; Ding, Er Xiong ; Hussain, Aqeel ; Mangler, Clemens ; Kauppinen, Esko I. ; Kotakoski, Jani ; Susi, Toma. / Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes. Julkaisussa: Advanced Functional Materials. 2019 ; Sivut 1-7.

Bibtex - Lataa

@article{ff4f9d55f3b64e1caa9ab51ef3144a74,
title = "Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes",
abstract = "The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances not only in electron optics and microscope stability but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical means. Here it is shown that silicon heteroatoms introduced via plasma irradiation into the lattice of single-walled carbon nanotubes (SWCNTs) can be manipulated using a focused 55–60 keV electron probe aimed at neighboring carbon sites. Moving the silicon atom mainly along the longitudinal axis of large 2.7 nm diameter tubes, more than 90 controlled lattice jumps are recorded and the relevant displacement cross sections are estimated. Molecular dynamics simulations show that even in 2 nm diameter SWCNTs, the threshold energies for out-of-plane dynamics are different than in graphene, and depend on the orientation of the silicon-carbon bond with respect to the electron beam as well as the local bonding of the displaced carbon atom and its neighbors. Atomic-level engineering of SWCNTs where the electron wave functions are more strictly confined than in 2D materials may enable the fabrication of tunable electronic resonators and other devices.",
keywords = "atom manipulation, heteroatoms, nanotechnology, STEM",
author = "Kimmo Mustonen and Alexander Markevich and Mukesh Tripathi and Heena Inani and Ding, {Er Xiong} and Aqeel Hussain and Clemens Mangler and Kauppinen, {Esko I.} and Jani Kotakoski and Toma Susi",
note = "| openaire: EC/H2020/756277/EU//ATMEN",
year = "2019",
month = "1",
day = "1",
doi = "10.1002/adfm.201901327",
language = "English",
pages = "1--7",
journal = "Advanced Functional Materials",
issn = "1616-301X",

}

RIS - Lataa

TY - JOUR

T1 - Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes

AU - Mustonen, Kimmo

AU - Markevich, Alexander

AU - Tripathi, Mukesh

AU - Inani, Heena

AU - Ding, Er Xiong

AU - Hussain, Aqeel

AU - Mangler, Clemens

AU - Kauppinen, Esko I.

AU - Kotakoski, Jani

AU - Susi, Toma

N1 - | openaire: EC/H2020/756277/EU//ATMEN

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances not only in electron optics and microscope stability but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical means. Here it is shown that silicon heteroatoms introduced via plasma irradiation into the lattice of single-walled carbon nanotubes (SWCNTs) can be manipulated using a focused 55–60 keV electron probe aimed at neighboring carbon sites. Moving the silicon atom mainly along the longitudinal axis of large 2.7 nm diameter tubes, more than 90 controlled lattice jumps are recorded and the relevant displacement cross sections are estimated. Molecular dynamics simulations show that even in 2 nm diameter SWCNTs, the threshold energies for out-of-plane dynamics are different than in graphene, and depend on the orientation of the silicon-carbon bond with respect to the electron beam as well as the local bonding of the displaced carbon atom and its neighbors. Atomic-level engineering of SWCNTs where the electron wave functions are more strictly confined than in 2D materials may enable the fabrication of tunable electronic resonators and other devices.

AB - The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances not only in electron optics and microscope stability but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical means. Here it is shown that silicon heteroatoms introduced via plasma irradiation into the lattice of single-walled carbon nanotubes (SWCNTs) can be manipulated using a focused 55–60 keV electron probe aimed at neighboring carbon sites. Moving the silicon atom mainly along the longitudinal axis of large 2.7 nm diameter tubes, more than 90 controlled lattice jumps are recorded and the relevant displacement cross sections are estimated. Molecular dynamics simulations show that even in 2 nm diameter SWCNTs, the threshold energies for out-of-plane dynamics are different than in graphene, and depend on the orientation of the silicon-carbon bond with respect to the electron beam as well as the local bonding of the displaced carbon atom and its neighbors. Atomic-level engineering of SWCNTs where the electron wave functions are more strictly confined than in 2D materials may enable the fabrication of tunable electronic resonators and other devices.

KW - atom manipulation

KW - heteroatoms

KW - nanotechnology

KW - STEM

UR - http://www.scopus.com/inward/record.url?scp=85067432961&partnerID=8YFLogxK

U2 - 10.1002/adfm.201901327

DO - 10.1002/adfm.201901327

M3 - Article

SP - 1

EP - 7

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

M1 - 1901327

ER -

ID: 35124737