Electroluminescent cooling using double diode structures

Toufik Sadi; Ivan Radevici; Pyry Kivisaari; Alberto Casado; Jani Oksanen

doi:10.1109/NUSOD.2018.8570294

Electroluminescent cooling using double diode structures

Toufik Sadi
, Ivan Radevici
, Pyry Kivisaari
, Alberto Casado
, Jani Oksanen

Neurotieteen ja lääketieteellisen tekniikan laitos

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

4 Sitaatiot (Scopus)

Abstrakti

The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.

Alkuperäiskieli	Englanti
Otsikko	18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018
Toimittajat	Joachim Piprek, Aleksandra B. Djurisic
Kustantaja	IEEE
Sivut	125-126
Sivumäärä	2
Vuosikerta	2018-November
ISBN (elektroninen)	9781538655993
DOI - pysyväislinkit	https://doi.org/10.1109/NUSOD.2018.8570294
Tila	Julkaistu - 7 jouluk. 2018
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	International Conference on Numerical Simulation of Optoelectronic Devices - Hong Kong, Kiina Kesto: 5 marrask. 2018 → 9 marrask. 2018 Konferenssinumero: 18

Conference

Conference	International Conference on Numerical Simulation of Optoelectronic Devices
Lyhennettä	NUSOD
Maa/Alue	Kiina
Kaupunki	Hong Kong
Ajanjakso	05/11/2018 → 09/11/2018

Rahoitus

ACKNOWLEDGMENT We acknowledge funding from the Academy of Finland and the European Research Council under the Horizon 2020 programme (grant agreement No 638173).

Pääsy asiakirjaan

10.1109/NUSOD.2018.8570294

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Sadi, T., Radevici, I., Kivisaari, P., Casado, A., & Oksanen, J. (2018). Electroluminescent cooling using double diode structures. teoksessa J. Piprek, & A. B. Djurisic (Toimittajat), 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018 (Vuosikerta 2018-November, Sivut 125-126). Artikkeli 8570294 IEEE. https://doi.org/10.1109/NUSOD.2018.8570294

@inproceedings{1381d1860a5b456aa066bb8f6bff55a4,

title = "Electroluminescent cooling using double diode structures",

abstract = "The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.",

author = "Toufik Sadi and Ivan Radevici and Pyry Kivisaari and Alberto Casado and Jani Oksanen",

note = "| openaire: EC/H2020/638173/EU//iTPX ; International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD ; Conference date: 05-11-2018 Through 09-11-2018",

year = "2018",

month = dec,

day = "7",

doi = "10.1109/NUSOD.2018.8570294",

language = "English",

volume = "2018-November",

pages = "125--126",

editor = "Joachim Piprek and Djurisic, \{Aleksandra B.\}",

booktitle = "18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018",

publisher = "IEEE",

address = "United States",

}

Sadi, T, Radevici, I, Kivisaari, P, Casado, A & Oksanen, J 2018, Electroluminescent cooling using double diode structures. julkaisussa J Piprek & AB Djurisic (toim), 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018. Vuosikerta 2018-November, 8570294, IEEE, Sivut 125-126, International Conference on Numerical Simulation of Optoelectronic Devices, Hong Kong, Kiina, 05/11/2018. https://doi.org/10.1109/NUSOD.2018.8570294

Electroluminescent cooling using double diode structures. / Sadi, Toufik; Radevici, Ivan; Kivisaari, Pyry et al.
18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018. toim. / Joachim Piprek; Aleksandra B. Djurisic. Vuosikerta 2018-November IEEE, 2018. s. 125-126 8570294.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Electroluminescent cooling using double diode structures

AU - Sadi, Toufik

AU - Radevici, Ivan

AU - Kivisaari, Pyry

AU - Casado, Alberto

AU - Oksanen, Jani

N1 - Conference code: 18

PY - 2018/12/7

Y1 - 2018/12/7

N2 - The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.

AB - The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.

UR - https://www.scopus.com/pages/publications/85060010299

U2 - 10.1109/NUSOD.2018.8570294

DO - 10.1109/NUSOD.2018.8570294

M3 - Conference article in proceedings

AN - SCOPUS:85060010299

VL - 2018-November

SP - 125

EP - 126

BT - 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018

A2 - Piprek, Joachim

A2 - Djurisic, Aleksandra B.

PB - IEEE

T2 - International Conference on Numerical Simulation of Optoelectronic Devices

Y2 - 5 November 2018 through 9 November 2018

ER -

Electroluminescent cooling using double diode structures

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