Abstrakti
The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.
Alkuperäiskieli | Englanti |
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Otsikko | 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018 |
Toimittajat | Joachim Piprek, Aleksandra B. Djurisic |
Kustantaja | IEEE |
Sivut | 125-126 |
Sivumäärä | 2 |
Vuosikerta | 2018-November |
ISBN (elektroninen) | 9781538655993 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 7 jouluk. 2018 |
OKM-julkaisutyyppi | A4 Artikkeli konferenssijulkaisussa |
Tapahtuma | International Conference on Numerical Simulation of Optoelectronic Devices - Hong Kong, Kiina Kesto: 5 marrask. 2018 → 9 marrask. 2018 Konferenssinumero: 18 |
Conference
Conference | International Conference on Numerical Simulation of Optoelectronic Devices |
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Lyhennettä | NUSOD |
Maa/Alue | Kiina |
Kaupunki | Hong Kong |
Ajanjakso | 05/11/2018 → 09/11/2018 |