Electroluminescent cooling in intracavity light emitters: modeling and experiments

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Electroluminescent cooling in intracavity light emitters : modeling and experiments. / Sadi, Toufik; Kivisaari, Pyry; Tiira, Jonna; Radevici, Ivan; Haggren, Tuomas; Oksanen, Jani.

julkaisussa: Optical and Quantum Electronics, Vuosikerta 50, Nro 1, 18, 01.01.2018, s. 1-8.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Bibtex - Lataa

@article{33efe6e457084b3191ec46987e1d7f9e,
title = "Electroluminescent cooling in intracavity light emitters: modeling and experiments",
abstract = "We develop a coupled electronic charge and photon transport simulation model to allow for deeper analysis of our recent experimental studies of intracavity double diode structures (DDSs). The studied structures consist of optically coupled AlGaAs/GaAs double heterojunction light emitting diode (LED) and GaAs p–n-homojunction photodiode (PD) structure, integrated as a single semiconductor device. The drift–diffusion formalism for charge transport and an optical model, coupling the LED and the PD, are self-consistently applied to complement our experimental work on the evaluation of the efficiency of these DDSs. This is to understand better their suitability for electroluminescent cooling (ELC) demonstration, and shed further light on electroluminescence and optical energy transfer in the structures. The presented results emphasize the adverse effect of non-radiative recombination on device efficiency, which is the main obstacle for achieving ELC in III-V semiconductors.",
keywords = "Electroluminescent cooling, III-As, Intracavity light emitters, Light-emitting diodes, Photodiodes",
author = "Toufik Sadi and Pyry Kivisaari and Jonna Tiira and Ivan Radevici and Tuomas Haggren and Jani Oksanen",
note = "| openaire: EC/H2020/638173/EU//iTPX",
year = "2018",
month = "1",
day = "1",
doi = "10.1007/s11082-017-1285-z",
language = "English",
volume = "50",
pages = "1--8",
journal = "Optical and Quantum Electronics",
issn = "0306-8919",
number = "1",

}

RIS - Lataa

TY - JOUR

T1 - Electroluminescent cooling in intracavity light emitters

T2 - modeling and experiments

AU - Sadi, Toufik

AU - Kivisaari, Pyry

AU - Tiira, Jonna

AU - Radevici, Ivan

AU - Haggren, Tuomas

AU - Oksanen, Jani

N1 - | openaire: EC/H2020/638173/EU//iTPX

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We develop a coupled electronic charge and photon transport simulation model to allow for deeper analysis of our recent experimental studies of intracavity double diode structures (DDSs). The studied structures consist of optically coupled AlGaAs/GaAs double heterojunction light emitting diode (LED) and GaAs p–n-homojunction photodiode (PD) structure, integrated as a single semiconductor device. The drift–diffusion formalism for charge transport and an optical model, coupling the LED and the PD, are self-consistently applied to complement our experimental work on the evaluation of the efficiency of these DDSs. This is to understand better their suitability for electroluminescent cooling (ELC) demonstration, and shed further light on electroluminescence and optical energy transfer in the structures. The presented results emphasize the adverse effect of non-radiative recombination on device efficiency, which is the main obstacle for achieving ELC in III-V semiconductors.

AB - We develop a coupled electronic charge and photon transport simulation model to allow for deeper analysis of our recent experimental studies of intracavity double diode structures (DDSs). The studied structures consist of optically coupled AlGaAs/GaAs double heterojunction light emitting diode (LED) and GaAs p–n-homojunction photodiode (PD) structure, integrated as a single semiconductor device. The drift–diffusion formalism for charge transport and an optical model, coupling the LED and the PD, are self-consistently applied to complement our experimental work on the evaluation of the efficiency of these DDSs. This is to understand better their suitability for electroluminescent cooling (ELC) demonstration, and shed further light on electroluminescence and optical energy transfer in the structures. The presented results emphasize the adverse effect of non-radiative recombination on device efficiency, which is the main obstacle for achieving ELC in III-V semiconductors.

KW - Electroluminescent cooling

KW - III-As

KW - Intracavity light emitters

KW - Light-emitting diodes

KW - Photodiodes

UR - http://www.scopus.com/inward/record.url?scp=85039075494&partnerID=8YFLogxK

U2 - 10.1007/s11082-017-1285-z

DO - 10.1007/s11082-017-1285-z

M3 - Article

VL - 50

SP - 1

EP - 8

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

SN - 0306-8919

IS - 1

M1 - 18

ER -

ID: 16955815