Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Standard

Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K. / Mynbaev, K. D.; Bazhenov, N. L.; Semakova, A. A.; Mikhailova, M. P.; Stoyanov, N. D.; Kizhaev, S. S.; Molchanov, S. S.; Astakhova, A. P.; Chernyaev, A. V.; Lipsanen, H.; Bougrov, V. E.

julkaisussa: Semiconductors, Vuosikerta 51, Nro 2, 02.2017, s. 239-244.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Harvard

Mynbaev, KD, Bazhenov, NL, Semakova, AA, Mikhailova, MP, Stoyanov, ND, Kizhaev, SS, Molchanov, SS, Astakhova, AP, Chernyaev, AV, Lipsanen, H & Bougrov, VE 2017, 'Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K', Semiconductors, Vuosikerta. 51, Nro 2, Sivut 239-244. https://doi.org/10.1134/S1063782617020117

APA

Mynbaev, K. D., Bazhenov, N. L., Semakova, A. A., Mikhailova, M. P., Stoyanov, N. D., Kizhaev, S. S., ... Bougrov, V. E. (2017). Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K. Semiconductors, 51(2), 239-244. https://doi.org/10.1134/S1063782617020117

Vancouver

Mynbaev KD, Bazhenov NL, Semakova AA, Mikhailova MP, Stoyanov ND, Kizhaev SS et al. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K. Semiconductors. 2017 helmi;51(2):239-244. https://doi.org/10.1134/S1063782617020117

Author

Mynbaev, K. D. ; Bazhenov, N. L. ; Semakova, A. A. ; Mikhailova, M. P. ; Stoyanov, N. D. ; Kizhaev, S. S. ; Molchanov, S. S. ; Astakhova, A. P. ; Chernyaev, A. V. ; Lipsanen, H. ; Bougrov, V. E. / Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K. Julkaisussa: Semiconductors. 2017 ; Vuosikerta 51, Nro 2. Sivut 239-244.

Bibtex - Lataa

@article{f41baf98e2814241aec8b4083f74a2a7,
title = "Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K",
abstract = "The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2-300 K. At low temperatures (T = 4.2-100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 mu m. The emission becomes spontaneous at T > 70 K due to the resonant {"}switch-on{"} of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole, with hole transition to the spin-orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.",
keywords = "LASERS, PARAMETERS, INAS",
author = "Mynbaev, {K. D.} and Bazhenov, {N. L.} and Semakova, {A. A.} and Mikhailova, {M. P.} and Stoyanov, {N. D.} and Kizhaev, {S. S.} and Molchanov, {S. S.} and Astakhova, {A. P.} and Chernyaev, {A. V.} and H. Lipsanen and Bougrov, {V. E.}",
year = "2017",
month = "2",
doi = "10.1134/S1063782617020117",
language = "English",
volume = "51",
pages = "239--244",
journal = "Semiconductors",
issn = "1063-7826",
number = "2",

}

RIS - Lataa

TY - JOUR

T1 - Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K

AU - Mynbaev, K. D.

AU - Bazhenov, N. L.

AU - Semakova, A. A.

AU - Mikhailova, M. P.

AU - Stoyanov, N. D.

AU - Kizhaev, S. S.

AU - Molchanov, S. S.

AU - Astakhova, A. P.

AU - Chernyaev, A. V.

AU - Lipsanen, H.

AU - Bougrov, V. E.

PY - 2017/2

Y1 - 2017/2

N2 - The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2-300 K. At low temperatures (T = 4.2-100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 mu m. The emission becomes spontaneous at T > 70 K due to the resonant "switch-on" of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole, with hole transition to the spin-orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.

AB - The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2-300 K. At low temperatures (T = 4.2-100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 mu m. The emission becomes spontaneous at T > 70 K due to the resonant "switch-on" of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole, with hole transition to the spin-orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.

KW - LASERS

KW - PARAMETERS

KW - INAS

U2 - 10.1134/S1063782617020117

DO - 10.1134/S1063782617020117

M3 - Article

VL - 51

SP - 239

EP - 244

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 11560900