Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • RAS - Ioffe Physico Technical Institute
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • Microsensor Technology

Kuvaus

The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2-300 K. At low temperatures (T = 4.2-100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 mu m. The emission becomes spontaneous at T > 70 K due to the resonant "switch-on" of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole, with hole transition to the spin-orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut239-244
Sivumäärä6
JulkaisuSemiconductors
Vuosikerta51
Numero2
TilaJulkaistu - helmikuuta 2017
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 11560900