Electrode Dependence of Tunneling Electroresistance and Switching Stability in Organic Ferroelectric P(VDF-TrFE)-Based Tunnel Junctions

Sayani Majumdar*, Binbin Chen, Qi Hang Qin, Himadri S. Majumdar, Sebastiaan van Dijken

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

37 Sitaatiot (Scopus)

Abstrakti

Ferroelectric tunnel junctions (FTJs) are promising candidates for nonvolatile memories and memristor-based computing circuits. Thus far, most research has focused on FTJs with a perovskite oxide ferroelectric tunnel barrier. As the need for high-temperature epitaxial film growth challenges the technological application of such inorganic junctions, more easily processable organic ferroelectrics can serve as alternative if large tunneling electroresistance (TER) and good switching durability would persist. This study reports on the performance of FTJs with a spin-coated ferroelectric P(VDF-TrFE) copolymer tunnel barrier. The use of three different bottom electrodes, indium tin oxide (ITO), La0.67Sr0.33MnO3, (LSMO), and Nb-doped SrTiO3 (STO) are compared and it is shown that the polarity and magnitude of the TER effect depend on their conductivity. The largest TER of up to 107% at room temperature is measured on FTJs with a semiconducting Nb-doped STO electrode. This large switching effect is attributed to the formation of an extra barrier over the space charge region in the substrate. The organic FTJs exhibit good resistance retention and switching endurance up to 380 K, which is just below the ferroelectric Curie temperature of the P(VDF-TrFE) barrier.

AlkuperäiskieliEnglanti
Artikkeli1703273
Sivut1-8
Sivumäärä8
JulkaisuAdvanced Functional Materials
Vuosikerta28
Numero15
DOI - pysyväislinkit
TilaJulkaistu - 2018
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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