Electrical Low-Frequency 1/fγ Noise Due to Surface Diffusion of Scatterers on an Ultra-low-Noise Graphene Platform

Masahiro Kamada, Antti Laitinen, Weijun Zeng, Marco Will, Jayanta Sarkar, Kirsi Tappura, Heikki Seppä, Pertti Hakonen

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

17 Sitaatiot (Scopus)
51 Lataukset (Pure)

Abstrakti

Low-frequency 1/f γ noise is ubiquitous, even in high-end electronic devices. Recently, it was found that adsorbed O2 molecules provide the dominant contribution to flux noise in superconducting quantum interference devices. To clarify the basic principles of such adsorbate noise, we have investigated low-frequency noise, while the mobility of surface adsorbates is varied by temperature. We measured low-frequency current noise in suspended monolayer graphene Corbino samples under the influence of adsorbed Ne atoms. Owing to the extremely small intrinsic noise of suspended graphene, we could resolve a combination of 1/f γ and Lorentzian noise induced by the presence of Ne. We find that the 1/f γ noise is caused by surface diffusion of Ne atoms and by temporary formation of few-Ne-atom clusters. Our results support the idea that clustering dynamics of defects is relevant for understanding of 1/f noise in metallic systems.
AlkuperäiskieliEnglanti
Sivut7637-7643
Sivumäärä7
JulkaisuNano Letters
Vuosikerta21
Numero18
Varhainen verkossa julkaisun päivämäärä7 syysk. 2021
DOI - pysyväislinkit
TilaJulkaistu - 22 syysk. 2021
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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