Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS2

Yunyun Dai, Yadong Wang, Susobhan Das, Hui Xue, Xueyin Bai, Eero Hulkko, Guangyu Zhang, Xiaoxia Yang, Qing Dai, Zhipei Sun

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

9 Sitaatiot (Scopus)
34 Lataukset (Pure)

Abstrakti

Monolayer transition-metal dichalcogenides show strong optical nonlinearity with great potential for various emerging applications. Here we demonstrate the gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS2. Up to 80% modulation depth in four-wave mixing is achieved when the generated signal is resonant with the A exciton at room temperature, corresponding to an effective third-order optical nonlinearity |χ(3)eff| tuning from (∼12.0 to 5.45) × 10-18 m2/V2. The tunability of the effective second-order optical nonlinearity |χ(2)eff| at 440 nm C-exciton resonance wavelength is also demonstrated from (∼11.6 to 7.40) × 10-9 m/V with sum-frequency generation. Such a large tunability in optical nonlinearities arises from the strong excitonic charging effect in monolayer transition-metal dichalcogenides, which allows for the electrical control of the interband excitonic transitions and thus nonlinear optical responses for future on-chip nonlinear optoelectronics.

AlkuperäiskieliEnglanti
Sivut8442-8448
Sivumäärä7
JulkaisuACS Nano
Vuosikerta14
Numero7
DOI - pysyväislinkit
TilaJulkaistu - 28 heinäkuuta 2020
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

Sormenjälki

Sukella tutkimusaiheisiin 'Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS<sub>2</sub>'. Ne muodostavat yhdessä ainutlaatuisen sormenjäljen.

Siteeraa tätä