Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Standard

Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium. / Kalliovaara, T.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Milazzo, R.; Impellizzeri, G.; Fortunato, G.; Napolitani, E.

julkaisussa: Applied Physics Letters, Vuosikerta 109, Nro 18, 182107, 31.10.2016, s. 1-4.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Harvard

Kalliovaara, T, Slotte, J, Makkonen, I, Kujala, J, Tuomisto, F, Milazzo, R, Impellizzeri, G, Fortunato, G & Napolitani, E 2016, 'Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium', Applied Physics Letters, Vuosikerta. 109, Nro 18, 182107, Sivut 1-4. https://doi.org/10.1063/1.4966947

APA

Vancouver

Author

Kalliovaara, T. ; Slotte, J. ; Makkonen, I. ; Kujala, J. ; Tuomisto, F. ; Milazzo, R. ; Impellizzeri, G. ; Fortunato, G. ; Napolitani, E. / Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium. Julkaisussa: Applied Physics Letters. 2016 ; Vuosikerta 109, Nro 18. Sivut 1-4.

Bibtex - Lataa

@article{e311695b765a4a1aaf96b2a9e9e1bf37,
title = "Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium",
abstract = "Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.",
author = "T. Kalliovaara and J. Slotte and I. Makkonen and J. Kujala and F. Tuomisto and R. Milazzo and G. Impellizzeri and G. Fortunato and E. Napolitani",
year = "2016",
month = "10",
day = "31",
doi = "10.1063/1.4966947",
language = "English",
volume = "109",
pages = "1--4",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "18",

}

RIS - Lataa

TY - JOUR

T1 - Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

AU - Kalliovaara, T.

AU - Slotte, J.

AU - Makkonen, I.

AU - Kujala, J.

AU - Tuomisto, F.

AU - Milazzo, R.

AU - Impellizzeri, G.

AU - Fortunato, G.

AU - Napolitani, E.

PY - 2016/10/31

Y1 - 2016/10/31

N2 - Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.

AB - Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.

UR - http://www.scopus.com/inward/record.url?scp=84994351504&partnerID=8YFLogxK

U2 - 10.1063/1.4966947

DO - 10.1063/1.4966947

M3 - Article

AN - SCOPUS:84994351504

VL - 109

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 182107

ER -

ID: 9410427