Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Università Degli Studi di Padova
  • CNR
  • CNR-ENEA-EURATOM Association

Kuvaus

Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli182107
Sivut1-4
JulkaisuApplied Physics Letters
Vuosikerta109
Numero18
TilaJulkaistu - 31 lokakuuta 2016
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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