Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

T. Kalliovaara; J. Slotte; I. Makkonen; J. Kujala; F. Tuomisto; R. Milazzo; G. Impellizzeri; G. Fortunato; E. Napolitani

doi:10.1063/1.4966947

Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

T. Kalliovaara
, J. Slotte
, I. Makkonen
, J. Kujala
, F. Tuomisto
, R. Milazzo
, G. Impellizzeri
, G. Fortunato
, E. Napolitani

Teknillisen fysiikan laitos

University of Padova
National Research Council of Italy
CNR-ENEA-EURATOM Association

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

13 Sitaatiot (Scopus)

222 Lataukset (Pure)

Abstrakti

Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.

Alkuperäiskieli	Englanti
Artikkeli	182107
Sivut	1-4
Julkaisu	Applied Physics Letters
Vuosikerta	109
Numero	18
DOI - pysyväislinkit	https://doi.org/10.1063/1.4966947
Tila	Julkaistu - 31 lokak. 2016
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Pääsy asiakirjaan

10.1063/1.4966947

1.4966947Final published version, 999 KB

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2 Päättynyt

Suuren mittakaavan elektronirakennelaskutekniikat materiaalien karakterisoinnin avuksi
Makkonen, I. (Vastuullinen johtaja)
01/09/2015 → 31/08/2019
Projekti: Academy of Finland: Other research funding
Suuren mittakaavan elektronirakennelaskutekniikat materiaalien karakterisoinnin avuksi
Makkonen, I. (Vastuullinen johtaja), Härkönen, J. (Projektin jäsen), Bruncrona, A. (Projektin jäsen), Kalliovaara, T. (Projektin jäsen), Simula, K. (Projektin jäsen) & Prozheeva, V. (Projektin jäsen)
01/09/2015 → 31/08/2018
Projekti: Academy of Finland: Other research funding

Science-IT
Hakala, M. (Manager)
Perustieteiden korkeakoulu
Laitteistot/tilat: Facility

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title = "Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium",

abstract = "Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.",

author = "T. Kalliovaara and J. Slotte and I. Makkonen and J. Kujala and F. Tuomisto and R. Milazzo and G. Impellizzeri and G. Fortunato and E. Napolitani",

year = "2016",

month = oct,

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doi = "10.1063/1.4966947",

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volume = "109",

pages = "1--4",

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TY - JOUR

T1 - Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

AU - Kalliovaara, T.

AU - Slotte, J.

AU - Makkonen, I.

AU - Kujala, J.

AU - Tuomisto, F.

AU - Milazzo, R.

AU - Impellizzeri, G.

AU - Fortunato, G.

AU - Napolitani, E.

PY - 2016/10/31

Y1 - 2016/10/31

N2 - Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.

AB - Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.

UR - https://www.scopus.com/pages/publications/84994351504

U2 - 10.1063/1.4966947

DO - 10.1063/1.4966947

M3 - Article

AN - SCOPUS:84994351504

SN - 0003-6951

VL - 109

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 182107

ER -

Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

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