Elastic-plastic transition in MBE-Grown GaSb semiconducting crystal examined by nanoindentation

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Tampere University of Technology
  • University of Silesia in Katowice
  • University of Helsinki

Kuvaus

The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E = 83.07 ± 1.78 GPa), hardness (H = 5.19 ± 0.25 GPa) and "true hardness" (HT = 5.73 ± 0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σY = 3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut1131-1133
Sivumäärä3
JulkaisuActa Physica Polonica A
Vuosikerta130
Numero4
TilaJulkaistu - 1 lokakuuta 2016
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 10393936