Elastic-plastic transition during nanoindentation in bulk GaN crystal

Masaki Fujikane*, Michał Leszczyński, Shijo Nagao, Tadachika Nakayama, Shinsuke Yamanaka, Koichi Niihara, Roman Nowak

*Tämän työn vastaava kirjoittaja

    Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

    39 Sitaatiot (Scopus)

    Abstrakti

    Mechanical properties of a defect-free bulk GaN single crystal has been studied by nanoindentation in the C (0001) surface. Our experiments provide consistent evaluations of Young's modulus (E = 320 GPa) measured with both Berkovich and spherical indenters. Additionally, Berkovich hardness (H = 17 GPa) and true hardness (Ht = 25 GPa) were determined. Pop-in events are confirmed to indicate the elastic-plastic transition of the material, and give also consistent yield (maximum) shear stress, τmax = 19 GPa, for both the indenters. To achieve these precise analyses, the effective curvature of the indenter was determined by the Hertz analysis of the contact between the indenter and a diamond crystal, in addition to the Oliver-Pharr method with a standard fused quartz.

    AlkuperäiskieliEnglanti
    Sivut405-411
    Sivumäärä7
    JulkaisuJournal of Alloys and Compounds
    Vuosikerta450
    Numero1-2
    DOI - pysyväislinkit
    TilaJulkaistu - 14 helmikuuta 2008
    OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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  • Siteeraa tätä

    Fujikane, M., Leszczyński, M., Nagao, S., Nakayama, T., Yamanaka, S., Niihara, K., & Nowak, R. (2008). Elastic-plastic transition during nanoindentation in bulk GaN crystal. Journal of Alloys and Compounds, 450(1-2), 405-411. https://doi.org/10.1016/j.jallcom.2006.10.121