Efficient surface passivation of black silicon using spatial atomic layer deposition

Ismo Heikkinen; Päivikki Repo; Ville Vähänissi; Toni Pasanen; Ville Malinen; Hele Savin

doi:10.1016/j.egypro.2017.09.300

Efficient surface passivation of black silicon using spatial atomic layer deposition

Ismo Heikkinen, Päivikki Repo, Ville Vähänissi, Toni Pasanen, Ville Malinen, Hele Savin

Beneq Oy

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

9 Sitaatiot (Scopus)

311 Lataukset (Pure)

Abstrakti

Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.

Alkuperäiskieli	Englanti
Otsikko	7th International Conference on Silicon Photovoltaics, SiliconPV 2017
Kustantaja	Elsevier BV
Sivut	282–287
Sivumäärä	6
Vuosikerta	124
DOI - pysyväislinkit	https://doi.org/10.1016/j.egypro.2017.09.300
Tila	Julkaistu - 21 syysk. 2017
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	International Conference on Crystalline Silicon Photovoltaics - Freiburg, Germany, Freiburg, Saksa Kesto: 3 huhtik. 2017 → 5 huhtik. 2017 Konferenssinumero: 7 http://siliconpv.com/home.html

Julkaisusarja

Nimi	Energy Procedia
Kustantaja	Elsevier BV
ISSN (painettu)	1876-6102

Conference

Conference	International Conference on Crystalline Silicon Photovoltaics
Lyhennettä	SiliconPV 2017
Maa/Alue	Saksa
Kaupunki	Freiburg
Ajanjakso	03/04/2017 → 05/04/2017
www-osoite	http://siliconpv.com/home.html

YK:n kestävän kehityksen tavoitteet

Tämä tuotos edistää seuraavia kestävän kehityksen tavoitteita:

Pääsy asiakirjaan

10.1016/j.egypro.2017.09.300Lisenssi: CC BY-NC-ND

1-s2.0-S1876610217342716-main
© 2017 The Authors. Published by Elsevier Ltd.
Final published version, 902 KBLisenssi: CC BY-NC-ND

Black silicon and defect engineering for highly efficient solar cells and modules, BLACK
Savin, H. (Vastuullinen tutkija), Vähänissi, V. (Projektin jäsen), Pasanen, T. (Projektin jäsen), von Gastrow, G. (Projektin jäsen), Liu, Z. (Projektin jäsen), Haarahiltunen, A. (Projektin jäsen), Modanese, C. (Projektin jäsen), Yli-Koski, M. (Projektin jäsen), Rauha, I. (Projektin jäsen) & Laine, H. (Projektin jäsen)
01/03/2015 → 28/02/2018
Projekti: Business Finland: Other research funding

OtaNano
Rissanen, A. (Manager)
Aalto-yliopisto
Laitteistot/tilat: Facility
OtaNano Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Laitteistot/tilat: Facility

Siteeraa tätä

@inproceedings{8e95c529a001469aa18a875424f415f0,

title = "Efficient surface passivation of black silicon using spatial atomic layer deposition",

abstract = "Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.",

keywords = "spatial atomic layer deposition, nanostructured silicon, high surface area, surface passivation, conformal coating, aluminum oxide",

author = "Ismo Heikkinen and P{\"a}ivikki Repo and Ville V{\"a}h{\"a}nissi and Toni Pasanen and Ville Malinen and Hele Savin",

year = "2017",

month = sep,

day = "21",

doi = "10.1016/j.egypro.2017.09.300",

language = "English",

volume = "124",

series = "Energy Procedia",

publisher = "Elsevier BV",

pages = "282–287",

booktitle = "7th International Conference on Silicon Photovoltaics, SiliconPV 2017",

address = "Netherlands",

note = "International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2017 ; Conference date: 03-04-2017 Through 05-04-2017",

url = "http://siliconpv.com/home.html",

}

Heikkinen, I, Repo, P , Vähänissi, V, Pasanen, T, Malinen, V & Savin, H 2017, Efficient surface passivation of black silicon using spatial atomic layer deposition. julkaisussa 7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Vuosikerta 124, Energy Procedia, Elsevier BV, Sivut 282–287, International Conference on Crystalline Silicon Photovoltaics, Freiburg, Saksa, 03/04/2017. https://doi.org/10.1016/j.egypro.2017.09.300

Efficient surface passivation of black silicon using spatial atomic layer deposition. / Heikkinen, Ismo; Repo, Päivikki ; Vähänissi, Ville et al.
7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Vuosikerta 124 Elsevier BV, 2017. s. 282–287 (Energy Procedia).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Efficient surface passivation of black silicon using spatial atomic layer deposition

AU - Heikkinen, Ismo

AU - Repo, Päivikki

AU - Vähänissi, Ville

AU - Pasanen, Toni

AU - Malinen, Ville

AU - Savin, Hele

N1 - Conference code: 7

PY - 2017/9/21

Y1 - 2017/9/21

N2 - Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.

AB - Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.

KW - spatial atomic layer deposition

KW - nanostructured silicon

KW - high surface area

KW - surface passivation

KW - conformal coating

KW - aluminum oxide

U2 - 10.1016/j.egypro.2017.09.300

DO - 10.1016/j.egypro.2017.09.300

M3 - Conference article in proceedings

VL - 124

T3 - Energy Procedia

SP - 282

EP - 287

BT - 7th International Conference on Silicon Photovoltaics, SiliconPV 2017

PB - Elsevier BV

T2 - International Conference on Crystalline Silicon Photovoltaics

Y2 - 3 April 2017 through 5 April 2017

ER -

Efficient surface passivation of black silicon using spatial atomic layer deposition

Abstrakti

Julkaisusarja

Conference

YK:n kestävän kehityksen tavoitteet

Pääsy asiakirjaan

Sormenjälki

Projektit

Black silicon and defect engineering for highly efficient solar cells and modules, BLACK

Laitteet

OtaNano

OtaNano Nanofab

Siteeraa tätä