Effects of lateral current injection in GaN multi-quantum well light-emitting diodes

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Alkuperäiskieli	Englanti
Julkaisu	Journal of Applied Physics
Vuosikerta	111
Numero	10
DOI - pysyväislinkit	https://doi.org/10.1063/1.4720584
Tila	Julkaistu - 2012
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

Pääsy asiakirjaan

@article{96233563f2f34f0ca7d8143991c4e468,

title = "Effects of lateral current injection in GaN multi-quantum well light-emitting diodes",

author = "P. Kivisaari and J. Oksanen and J. Tulkki",

year = "2012",

doi = "10.1063/1.4720584",

language = "English",

volume = "111",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Effects of lateral current injection in GaN multi-quantum well light-emitting diodes

AU - Kivisaari, P.

AU - Oksanen, J.

AU - Tulkki, J.

PY - 2012

Y1 - 2012

UR - http://dx.doi.org/10.1063/1.4720584

U2 - 10.1063/1.4720584

DO - 10.1063/1.4720584

M3 - Article

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

ER -