Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1- x)2O3 thin films

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • V. Prozheeva
  • R. Hölldobler
  • H. Von Wenckstern
  • M. Grundmann
  • F. Tuomisto

Organisaatiot

  • Leipzig University

Kuvaus

Various nominally undoped and Si-doped (InxGa1- x)2O3 thin films were grown by pulsed laser deposition in a continuous composition spread mode on c-plane α-sapphire and (100)-oriented MgO substrates. Positron annihilation spectroscopy in the Doppler broadening mode was used as the primary characterisation technique in order to investigate the effect of alloy composition and dopant atoms on the formation of vacancy-type defects. In the undoped samples, we observe a Ga2O3-like trend for low indium concentrations changing to In2O3-like behaviour along with the increase in the indium fraction. Increasing indium concentration is found to suppress defect formation in the undoped samples at [In] > 70 at. %. Si doping leads to positron saturation trapping in VIn-like defects, suggesting a vacancy concentration of at least mid-1018 cm-3 independent of the indium content.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli125705
Sivut1-6
JulkaisuJournal of Applied Physics
Vuosikerta123
Numero12
TilaJulkaistu - 28 maaliskuuta 2018
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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