Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

Haibing Huang; Chiara Modanese; Shenghua Sun; Guillaume von Gastrow; Jianbo Wang; Toni P. Pasanen; Shuo Li; Lichun Wang; Yameng Bao; Zhen Zhu; Sami Sneck; Hele Savin

doi:10.1016/j.solmat.2018.07.007

Effective passivation of p⁺ and n⁺ emitters using SiO₂/Al₂O₃/SiN_x stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

Haibing Huang^*, Chiara Modanese, Shenghua Sun, Guillaume von Gastrow, Jianbo Wang, Toni P. Pasanen, Shuo Li, Lichun Wang, Yameng Bao, Zhen Zhu, Sami Sneck, Hele Savin

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

36 Sitaatiot (Scopus)

133 Lataukset (Pure)

Abstrakti

In this paper, we present an effective emitter passivation scheme using SiO₂/Al₂O₃/SiN_x stacks. Our study shows that SiO₂/Al₂O₃/SiN_x stacks can well passivate both p⁺ and n⁺ emitters due to an excellent chemical passivation combined with a weak field-effect passivation. Good quality boron and phosphorus emitters were achieved over a broad emitter-doping range, as demonstrated by post-fired emitter saturation current of 20 and 30 fA cm⁻², respectively. Based on the results obtained with SiO₂/Al₂O₃/SiN_x emitter passivation, we present an industrial roadmap for a p-PERT bifacial cell structure. Using this roadmap, we demonstrate industrial p-PERT bifacial cells with front side efficiency of 20.5%, rear side efficiency of 19.8% (bifaciality factor BF = 0.98) for rear textured cells and 17.5% (BF = 0.85) for rear planar cells. In particular, the cells with bifacial SiO₂/Al₂O₃/SiN_x passivation on both p⁺ and n⁺ emitters also demonstrate promising performance and a simplified cell process. The results show that SiO₂/Al₂O₃/SiN_x emitter passivation scheme is a promising candidate for photovoltaic industry.

Alkuperäiskieli	Englanti
Sivut	356-364
Sivumäärä	9
Julkaisu	Solar Energy Materials and Solar Cells
Vuosikerta	186
DOI - pysyväislinkit	https://doi.org/10.1016/j.solmat.2018.07.007
Tila	Julkaistu - 1 marrask. 2018
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

YK:n kestävän kehityksen tavoitteet

Tämä tuotos edistää seuraavia kestävän kehityksen tavoitteita:

Pääsy asiakirjaan

10.1016/j.solmat.2018.07.007

ELEC-huang-et-al-Effective-passivation-Accepted manuscript Huang 2018Accepted author manuscript, 1,03 MBLisenssi: CC BY-NC-ND

Muut tiedostot ja linkit

Link to publication in Scopus

OtaNano
Rissanen, A. (Manager)
Aalto-yliopisto
Laitteistot/tilat: Facility
OtaNano Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Laitteistot/tilat: Facility

Siteeraa tätä

Huang, H., Modanese, C., Sun, S., von Gastrow, G., Wang, J., Pasanen, T. P., Li, S., Wang, L., Bao, Y., Zhu, Z., Sneck, S., & Savin, H. (2018). Effective passivation of p⁺ and n⁺ emitters using SiO₂/Al₂O₃/SiN_x stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells. Solar Energy Materials and Solar Cells, 186, 356-364. https://doi.org/10.1016/j.solmat.2018.07.007

@article{81ec0c3c779a4d2aba1d968ef711ba60,

title = "Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells",

abstract = "In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our study shows that SiO2/Al2O3/SiNx stacks can well passivate both p+ and n+ emitters due to an excellent chemical passivation combined with a weak field-effect passivation. Good quality boron and phosphorus emitters were achieved over a broad emitter-doping range, as demonstrated by post-fired emitter saturation current of 20 and 30 fA cm−2, respectively. Based on the results obtained with SiO2/Al2O3/SiNx emitter passivation, we present an industrial roadmap for a p-PERT bifacial cell structure. Using this roadmap, we demonstrate industrial p-PERT bifacial cells with front side efficiency of 20.5%, rear side efficiency of 19.8% (bifaciality factor BF = 0.98) for rear textured cells and 17.5% (BF = 0.85) for rear planar cells. In particular, the cells with bifacial SiO2/Al2O3/SiNx passivation on both p+ and n+ emitters also demonstrate promising performance and a simplified cell process. The results show that SiO2/Al2O3/SiNx emitter passivation scheme is a promising candidate for photovoltaic industry.",

keywords = "AlO, Boron emitter, PERT, Phosphorus emitter, SiO, Surface passivation",

author = "Haibing Huang and Chiara Modanese and Shenghua Sun and {von Gastrow}, Guillaume and Jianbo Wang and Pasanen, {Toni P.} and Shuo Li and Lichun Wang and Yameng Bao and Zhen Zhu and Sami Sneck and Hele Savin",

year = "2018",

month = nov,

day = "1",

doi = "10.1016/j.solmat.2018.07.007",

language = "English",

volume = "186",

pages = "356--364",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

}

Huang, H, Modanese, C, Sun, S, von Gastrow, G, Wang, J, Pasanen, TP, Li, S, Wang, L, Bao, Y, Zhu, Z, Sneck, S & Savin, H 2018, 'Effective passivation of p⁺ and n⁺ emitters using SiO₂/Al₂O₃/SiN_x stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells', Solar Energy Materials and Solar Cells, Vuosikerta 186, Sivut 356-364. https://doi.org/10.1016/j.solmat.2018.07.007

Effective passivation of p⁺ and n⁺ emitters using SiO₂/Al₂O₃/SiN_x stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells. / Huang, Haibing; Modanese, Chiara; Sun, Shenghua et al.
julkaisussa: Solar Energy Materials and Solar Cells, Vuosikerta 186, 01.11.2018, s. 356-364.

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

TY - JOUR

T1 - Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

AU - Huang, Haibing

AU - Modanese, Chiara

AU - Sun, Shenghua

AU - von Gastrow, Guillaume

AU - Wang, Jianbo

AU - Pasanen, Toni P.

AU - Li, Shuo

AU - Wang, Lichun

AU - Bao, Yameng

AU - Zhu, Zhen

AU - Sneck, Sami

AU - Savin, Hele

PY - 2018/11/1

Y1 - 2018/11/1

N2 - In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our study shows that SiO2/Al2O3/SiNx stacks can well passivate both p+ and n+ emitters due to an excellent chemical passivation combined with a weak field-effect passivation. Good quality boron and phosphorus emitters were achieved over a broad emitter-doping range, as demonstrated by post-fired emitter saturation current of 20 and 30 fA cm−2, respectively. Based on the results obtained with SiO2/Al2O3/SiNx emitter passivation, we present an industrial roadmap for a p-PERT bifacial cell structure. Using this roadmap, we demonstrate industrial p-PERT bifacial cells with front side efficiency of 20.5%, rear side efficiency of 19.8% (bifaciality factor BF = 0.98) for rear textured cells and 17.5% (BF = 0.85) for rear planar cells. In particular, the cells with bifacial SiO2/Al2O3/SiNx passivation on both p+ and n+ emitters also demonstrate promising performance and a simplified cell process. The results show that SiO2/Al2O3/SiNx emitter passivation scheme is a promising candidate for photovoltaic industry.

AB - In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our study shows that SiO2/Al2O3/SiNx stacks can well passivate both p+ and n+ emitters due to an excellent chemical passivation combined with a weak field-effect passivation. Good quality boron and phosphorus emitters were achieved over a broad emitter-doping range, as demonstrated by post-fired emitter saturation current of 20 and 30 fA cm−2, respectively. Based on the results obtained with SiO2/Al2O3/SiNx emitter passivation, we present an industrial roadmap for a p-PERT bifacial cell structure. Using this roadmap, we demonstrate industrial p-PERT bifacial cells with front side efficiency of 20.5%, rear side efficiency of 19.8% (bifaciality factor BF = 0.98) for rear textured cells and 17.5% (BF = 0.85) for rear planar cells. In particular, the cells with bifacial SiO2/Al2O3/SiNx passivation on both p+ and n+ emitters also demonstrate promising performance and a simplified cell process. The results show that SiO2/Al2O3/SiNx emitter passivation scheme is a promising candidate for photovoltaic industry.

KW - AlO

KW - Boron emitter

KW - PERT

KW - Phosphorus emitter

KW - SiO

KW - Surface passivation

UR - http://www.scopus.com/inward/record.url?scp=85049939475&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2018.07.007

DO - 10.1016/j.solmat.2018.07.007

M3 - Article

AN - SCOPUS:85049939475

SN - 0927-0248

VL - 186

SP - 356

EP - 364

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

Abstrakti

YK:n kestävän kehityksen tavoitteet

Pääsy asiakirjaan

Muut tiedostot ja linkit

Sormenjälki

Laitteet

OtaNano

OtaNano Nanofab

Siteeraa tätä

Effective passivation of p⁺ and n⁺ emitters using SiO₂/Al₂O₃/SiN_x stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells