Effect of low-temperature annealing on defect causing copper-related light-induced degradation in p-type silicon

Henri Vahlman*, Antti Haarahiltunen, Wolfram Kwapil, Jonas Schön, Marko Yli-Koski, Alessandro Inglese, Chiara Modanese, Hele Savin

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussaConference contributionScientificvertaisarvioitu

1 Sitaatiot (Scopus)
233 Lataukset (Pure)

Abstrakti

Copper is a common impurity in photovoltaic silicon. While reported to precipitate instantly in n-type Si, copper causes light-induced degradation (Cu-LID) in p-type Si. Recently, partial recovery of Cu-LID was observed after only few minutes of dark annealing at 200°C. In this contribution, we investigate the effects of the dark anneal on Cu-LID-limited minority carrier lifetime both experimentally and by simulations. Surprisingly, after initial recovery, the dark anneal results in further degradation corresponding to a many-fold increase in recombination activity compared to the degraded state after illumination. This anneal-induced degradation can potentially cause additional losses in accidentally Cu-contaminated devices when exposed to elevated temperatures, for example during recovery and regeneration treatments of solar cells. Transient ion drift measurements confirmed that the anneal-induced degradation cannot be attributed to residual interstitial Cu after illumination. After hundreds of hours of annealing, the samples showed another recovery. To analyze these experimental results, a comparison to simulations is performed at the end of the paper.

AlkuperäiskieliEnglanti
Otsikko7th International Conference on Silicon Photovoltaics, SiliconPV 2017
KustantajaElsevier
Sivut188-196
Sivumäärä9
DOI - pysyväislinkit
TilaJulkaistu - 2017
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaInternational Conference on Crystalline Silicon Photovoltaics - Freiburg, Germany, Freiburg, Saksa
Kesto: 3 huhtikuuta 20175 huhtikuuta 2017
Konferenssinumero: 7
http://siliconpv.com/home.html

Julkaisusarja

NimiEnergy Procedia
KustantajaElsevier
Vuosikerta124
ISSN (elektroninen)1876-6102

Conference

ConferenceInternational Conference on Crystalline Silicon Photovoltaics
LyhennettäSiliconPV 2017
MaaSaksa
KaupunkiFreiburg
Ajanjakso03/04/201705/04/2017
www-osoite

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    Vahlman, H., Haarahiltunen, A., Kwapil, W., Schön, J., Yli-Koski, M., Inglese, A., Modanese, C., & Savin, H. (2017). Effect of low-temperature annealing on defect causing copper-related light-induced degradation in p-type silicon. teoksessa 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 (Sivut 188-196). (Energy Procedia; Vuosikerta 124). Elsevier. https://doi.org/10.1016/j.egypro.2017.09.314